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Micro Commercial Co MMSS8550-H-TP
- Part Number:
- MMSS8550-H-TP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 2845312-MMSS8550-H-TP
- Description:
- TRANS PNP 25V 1.5A SOT23
- ECAD Model:
-
- Datasheet:
- MMSS8550-H-TP
Micro Commercial Co MMSS8550-H-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MMSS8550-H-TP.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMMSS8550
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 80mA, 800mA
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)1.5A
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.625W
- RoHS StatusROHS3 Compliant
MMSS8550-H-TP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 80mA, 800mA.Parts of this part have transition frequencies of 100MHz.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
MMSS8550-H-TP Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
MMSS8550-H-TP Applications
There are a lot of Micro Commercial Co
MMSS8550-H-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 80mA, 800mA.Parts of this part have transition frequencies of 100MHz.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
MMSS8550-H-TP Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
MMSS8550-H-TP Applications
There are a lot of Micro Commercial Co
MMSS8550-H-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMSS8550-H-TP More Descriptions
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
MMSS8550-H Series 25 V 1.5 A PNP Silicon Plastic-Encapsulate Transistor-SOT-23-3
Trans GP BJT PNP 25V 1.5A 3-Pin SOT-23 T/R
MMSS8550-H Series 25 V 1.5 A PNP Silicon Plastic-Encapsulate Transistor-SOT-23-3
Trans GP BJT PNP 25V 1.5A 3-Pin SOT-23 T/R
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