MMRF1312GSR5

NXP USA Inc. MMRF1312GSR5

Part Number:
MMRF1312GSR5
Manufacturer:
NXP USA Inc.
Ventron No:
2477536-MMRF1312GSR5
Description:
TRANS 960-1215MHZ 1000W PEAK 50V
ECAD Model:
Datasheet:
MMRF1312GSR5

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Specifications
NXP USA Inc. MMRF1312GSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1312GSR5.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-1230-4S GW
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • ECCN Code
    EAR99
  • Voltage - Rated
    112V
  • HTS Code
    8541.29.00.75
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Frequency
    1.03GHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Current - Test
    100mA
  • Transistor Type
    LDMOS (Dual)
  • Gain
    19.6dB
  • Power - Output
    1000W
  • Voltage - Test
    50V
  • RoHS Status
    ROHS3 Compliant
Description
MMRF1312GSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1312GSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1312GSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMRF1312GSR5 More Descriptions
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Power LDMOS Transistor N-Channel 52V 1000W 4-Pin NI-1230GS T/R
19.6 dB Compliant 1.03 GHz 1 kW 100 mA 50 V 112 V
LDO Voltage Regulators 150MA LDO ULTRA LOW IQ
TRANS 960-1215MHZ 1000W PEAK 50V
Product Comparison
The three parts on the right have similar specifications to MMRF1312GSR5.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Voltage - Rated
    HTS Code
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Current - Test
    Transistor Type
    Gain
    Power - Output
    Voltage - Test
    RoHS Status
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    JESD-30 Code
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    DS Breakdown Voltage-Min
    FET Technology
    View Compare
  • MMRF1312GSR5
    MMRF1312GSR5
    10 Weeks
    NI-1230-4S GW
    Tape & Reel (TR)
    2012
    Active
    Not Applicable
    EAR99
    112V
    8541.29.00.75
    NOT SPECIFIED
    1.03GHz
    NOT SPECIFIED
    100mA
    LDMOS (Dual)
    19.6dB
    1000W
    50V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMRF1022HSR5
    10 Weeks
    NI-1230-4LS2L
    Tape & Reel (TR)
    2013
    Active
    Not Applicable
    EAR99
    65V
    -
    NOT SPECIFIED
    2.14GHz
    NOT SPECIFIED
    500mA
    LDMOS (Dual)
    16.2dB
    63W
    28V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMRF1024HSR5
    10 Weeks
    NI-1230-4LS2L
    Tape & Reel (TR)
    2013
    Active
    Not Applicable
    EAR99
    65V
    -
    NOT SPECIFIED
    2.5GHz
    NOT SPECIFIED
    700mA
    LDMOS (Dual)
    14.1dB
    50W
    28V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMRF1008HSR5
    10 Weeks
    NI-780S
    Tape & Reel (TR)
    2013
    Active
    Not Applicable
    EAR99
    100V
    8541.29.00.75
    260
    1.03GHz
    40
    100mA
    LDMOS
    20.3dB
    275W
    50V
    ROHS3 Compliant
    YES
    SILICON
    2
    FET General Purpose Power
    DUAL
    FLAT
    R-CDFP-F2
    225°C
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    AMPLIFIER
    N-CHANNEL
    110V
    METAL-OXIDE SEMICONDUCTOR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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