NXP USA Inc. MMRF1306HSR5
- Part Number:
- MMRF1306HSR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477498-MMRF1306HSR5
- Description:
- FET RF 2CH 133V 230MHZ NI-1230S
- Datasheet:
- MMRF1306HSR5
NXP USA Inc. MMRF1306HSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1306HSR5.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4S
- PackagingTape & Reel (TR)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated133V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)260
- Frequency230MHz
- Time@Peak Reflow Temperature-Max (s)40
- Current - Test100mA
- Transistor TypeLDMOS (Dual)
- Gain24dB
- Power - Output1250W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MMRF1306HSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1306HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1306HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1306HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1306HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMRF1306HSR5 More Descriptions
Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V, CFM4F, RoHSNXP Semiconductors SCT
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1829
Power LDMOS Transistor N-Channel 133V 4-Pin NI-1230S T/R
24 dB Compliant Surface Mount 230 MHz Tape & Reel (TR) 1.25 kW 100 mA 50 V
Trans MOSFET N-CH 133V 4-Pin NI-1230S T/R
FET RF 2CH 133V 230MHZ NI-1230S
IC REG LINEAR 1.7V 150MA 4XDFN
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1829
Power LDMOS Transistor N-Channel 133V 4-Pin NI-1230S T/R
24 dB Compliant Surface Mount 230 MHz Tape & Reel (TR) 1.25 kW 100 mA 50 V
Trans MOSFET N-CH 133V 4-Pin NI-1230S T/R
FET RF 2CH 133V 230MHZ NI-1230S
IC REG LINEAR 1.7V 150MA 4XDFN
The three parts on the right have similar specifications to MMRF1306HSR5.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeDS Breakdown Voltage-MinFET TechnologyView Compare
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MMRF1306HSR510 WeeksNI-1230-4STape & Reel (TR)2014ActiveNot ApplicableEAR99133V8541.29.00.75260230MHz40100mALDMOS (Dual)24dB1250W50VROHS3 Compliant-----------------
-
10 WeeksNI-1230-4LS2LTape & Reel (TR)2013ActiveNot ApplicableEAR9965V-NOT SPECIFIED2.14GHzNOT SPECIFIED500mALDMOS (Dual)16.2dB63W28VROHS3 Compliant----------------
-
10 WeeksNI-1230-4LS2LTape & Reel (TR)2013ActiveNot ApplicableEAR9965V-NOT SPECIFIED2.5GHzNOT SPECIFIED700mALDMOS (Dual)14.1dB50W28VROHS3 Compliant----------------
-
10 WeeksNI-780STape & Reel (TR)2013ActiveNot ApplicableEAR99100V8541.29.00.752601.03GHz40100mALDMOS20.3dB275W50VROHS3 CompliantYESSILICON2FET General Purpose PowerDUALFLATR-CDFP-F2225°C1SINGLEENHANCEMENT MODESOURCEAMPLIFIERN-CHANNEL110VMETAL-OXIDE SEMICONDUCTOR
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