NXP USA Inc. MMRF1013HSR5
- Part Number:
- MMRF1013HSR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477473-MMRF1013HSR5
- Description:
- FET RF 2CH 65V 2.9GHZ
- ECAD Model:
-
- Datasheet:
- MMRF1013HSR5
NXP USA Inc. MMRF1013HSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1013HSR5.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4S
- PackagingTape & Reel (TR)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)260
- Frequency2.9GHz
- Time@Peak Reflow Temperature-Max (s)40
- Current - Test100mA
- Transistor TypeLDMOS (Dual)
- Gain13.3dB
- Power - Output320W
- Voltage - Test30V
- RoHS StatusROHS3 Compliant
MMRF1013HSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1013HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1013HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1013HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1013HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMRF1013HSR5 More Descriptions
Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1829
Transistor RF FET N-CH 65V 2700MHz to 2900MHz 4-Pin NI-1230S T/R
Power Factor Correction CONTRLR 0.075mA 146KHz 8-Pin SOIC N T/R
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1829
Transistor RF FET N-CH 65V 2700MHz to 2900MHz 4-Pin NI-1230S T/R
Power Factor Correction CONTRLR 0.075mA 146KHz 8-Pin SOIC N T/R
The three parts on the right have similar specifications to MMRF1013HSR5.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusView Compare
-
MMRF1013HSR510 WeeksNI-1230-4STape & Reel (TR)2014ActiveNot ApplicableEAR9965V8541.29.00.752602.9GHz40100mALDMOS (Dual)13.3dB320W30VROHS3 Compliant- -
10 WeeksNI-1230-4LS2LTape & Reel (TR)2013ActiveNot ApplicableEAR9965V-NOT SPECIFIED2.14GHzNOT SPECIFIED500mALDMOS (Dual)16.2dB63W28VROHS3 Compliant
-
-SOT-979ATape & Reel (TR)2013Obsolete3 (168 Hours)-50V--470MHz~860MHz--LDMOS20dB140W-ROHS3 Compliant
-
10 WeeksNI-1230-4LS2LTape & Reel (TR)2013ActiveNot ApplicableEAR9965V-NOT SPECIFIED2.5GHzNOT SPECIFIED700mALDMOS (Dual)14.1dB50W28VROHS3 Compliant
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