NXP USA Inc. MMRF1007HR5

Name: MMRF1007HR5
Brand: NXP USA Inc.
SKU: 2477905-MMRF1007HR5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMRF1007HR5

Manufacturer:: NXP USA Inc.

Ventron No:: 2477905-MMRF1007HR5

Description:: FET RF 2CH 110V 1.03GHZ NI-1230

ECAD Model:

Datasheet:: MMRF1007HR5

Specifications

NXP USA Inc. MMRF1007HR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MMRF1007HR5.

Factory Lead Time
10 Weeks
Package / Case
NI-1230-4H
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
110V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Frequency
1.03GHz
Time@Peak Reflow Temperature-Max (s)
40
Current - Test
150mA
Transistor Type
LDMOS (Dual)
Gain
20dB
Power - Output
1000W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant

Description

MMRF1007HR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMRF1007HR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMRF1007HR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MMRF1007HR5 More Descriptions

BL RF / Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
RF Power Transistor,965 to 1215 MHz, 1000 W, Typ Gain in dB is 20 @ 1030 MHz, 50 V, LDMOS, SOT1787
Transistor RF FET N-CH 110V 900MHz to 1215MHz 4-Pin NI-1230H T/R
Trans MOSFET N-CH 110V 4-Pin NI-1230H T/R
20 dB Compliant Screw 1.03 GHz Tape & Reel (TR) 1 kW 150 mA
IC PFC CTR CCM/DCM ADJUST 16SOIC

Product Comparison

The three parts on the right have similar specifications to MMRF1007HR5.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Surface Mount

Transistor Element Material

Number of Terminations

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

View Compare
MMRF1007HR5

NXP USA Inc.

10 Weeks

NI-1230-4H

Tape & Reel (TR)

2013

Active

Not Applicable

EAR99

110V

8541.29.00.75

260

1.03GHz

40

150mA

LDMOS (Dual)

20dB

1000W

50V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMRF1311HR5

NXP USA Inc.

-

SOT-979A

Tape & Reel (TR)

2013

Obsolete

3 (168 Hours)

-

50V

-

-

470MHz~860MHz

-

-

LDMOS

20dB

140W

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMRF1007HR5 vs MMRF1311HR5
MMRF1008HSR5

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

Active

Not Applicable

EAR99

100V

8541.29.00.75

260

1.03GHz

40

100mA

LDMOS

20.3dB

275W

50V

ROHS3 Compliant

YES

SILICON

2

FET General Purpose Power

DUAL

FLAT

R-CDFP-F2

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

AMPLIFIER

N-CHANNEL

110V

METAL-OXIDE SEMICONDUCTOR

MMRF1007HR5 vs MMRF1008HSR5
MMRF1310HR5

NXP USA Inc.

10 Weeks

NI780-4

Tape & Reel (TR)

2013

Active

3 (168 Hours)

EAR99

133V

8541.29.00.75

260

230MHz

40

100mA

LDMOS (Dual)

26.5dB

300W

50V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMRF1007HR5 vs MMRF1310HR5