ON Semiconductor MJW21196G
- Part Number:
- MJW21196G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585272-MJW21196G
- Description:
- TRANS NPN 250V 16A TO247
- Datasheet:
- MJW21196G
ON Semiconductor MJW21196G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJW21196G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time13 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC250V
- Max Power Dissipation200W
- Peak Reflow Temperature (Cel)260
- Current Rating16A
- Frequency4MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product4MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current16A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8A 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-247AD
- Vce Saturation (Max) @ Ib, Ic3V @ 3.2A, 16A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height21.08mm
- Length16.26mm
- Width5.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJW21196G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 8A 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 16A.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts can be achieved.
MJW21196G Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJW21196G Applications
There are a lot of ON Semiconductor
MJW21196G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 8A 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 16A.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts can be achieved.
MJW21196G Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJW21196G Applications
There are a lot of ON Semiconductor
MJW21196G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJW21196G More Descriptions
ON Semi MJW21196G NPN Bipolar Transistor; 16 A; 250 V; 3-Pin TO-247
Trans GP BJT NPN 250V 16A 3-Pin(3 Tab) TO-247 Rail - Rail/Tube
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 250 V, 200 W, 16 A, 20 Rohs Compliant: Yes |Onsemi MJW21196G
MJL Series 250 V 16 A Flange Mount NPN Silicon Power Transistor - TO-247
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPLOAR NPN 16A TO247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: -; Power Dissipation Pd: 200W; DC Collector Current: 16A; DC Current Gain hFE: 20hFE; Transistor C
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output disk head positioners and linear applications.
Trans GP BJT NPN 250V 16A 3-Pin(3 Tab) TO-247 Rail - Rail/Tube
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 250 V, 200 W, 16 A, 20 Rohs Compliant: Yes |Onsemi MJW21196G
MJL Series 250 V 16 A Flange Mount NPN Silicon Power Transistor - TO-247
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPLOAR NPN 16A TO247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: -; Power Dissipation Pd: 200W; DC Collector Current: 16A; DC Current Gain hFE: 20hFE; Transistor C
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output disk head positioners and linear applications.
The three parts on the right have similar specifications to MJW21196G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightPolarityTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MJW21196GACTIVE (Last Updated: 2 days ago)13 WeeksThrough HoleTO-247-3NO3SILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors250V200W26016A4MHz4031Single200WCOLLECTORAMPLIFIER4MHzNPNNPN250V16A20 @ 8A 5V100μATO-247AD3V @ 3.2A, 16A250V4MHz1V400V5V2021.08mm16.26mm5.3mmNo SVHCNoROHS3 CompliantLead Free-----------
-
ACTIVE (Last Updated: 2 days ago)6 WeeksThrough HoleTO-247-3NO3SILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-250V200W260-16A4MHz4031Single200WCOLLECTORAMPLIFIER4MHz-PNP250V16A20 @ 8A 5V100μATO-247AD3V @ 3.2A, 16A250V4MHz1V400V5V2021.08mm16.26mm5.3mmNo SVHCNoROHS3 CompliantLead Free4.535924gPNP, NPN--------
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--Through HoleTO-247-3NO-SILICON-65°C~150°C TJTube-e3noObsolete1 (Unlimited)3-MATTE TIN---NOT SPECIFIED--NOT SPECIFIED31--COLLECTORAMPLIFIER-PNPPNP--15 @ 4A 2V10μATO-247AE2V @ 1.6A, 8A-4MHz---------ROHS3 Compliant---SINGLER-PSFM-T3COMMERCIALSINGLE125W150V8A4MHz
-
--Through HoleTO-247-3NO-SILICON-65°C~150°C TJTube-e0noObsolete3 (168 Hours)3-TIN LEAD---NOT SPECIFIED--NOT SPECIFIED31--COLLECTORAMPLIFIER-PNPPNP--15 @ 4A 2V10μATO-247AE2V @ 1.6A, 8A-4MHz---------Non-RoHS Compliant---SINGLER-PSFM-T3COMMERCIALSINGLE125W150V8A4MHz
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