ON Semiconductor MJW1302A
- Part Number:
- MJW1302A
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467004-MJW1302A
- Description:
- TRANS PNP 230V 15A TO247
- ECAD Model:
-
- Datasheet:
- MJW1302A
ON Semiconductor MJW1302A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJW1302A.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2010
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC-230V
- Max Power Dissipation200W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating-15A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 7A 5V
- Current - Collector Cutoff (Max)50μA ICBO
- JEDEC-95 CodeTO-247AD
- Vce Saturation (Max) @ Ib, Ic2V @ 1A, 10A
- Collector Emitter Breakdown Voltage230V
- Current - Collector (Ic) (Max)15A
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage400mV
- Collector Base Voltage (VCBO)230V
- Emitter Base Voltage (VEBO)5V
- hFE Min50
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJW1302A Overview
DC current gain in this device equals 50 @ 7A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 1A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 15A volts.
MJW1302A Features
the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
MJW1302A Applications
There are a lot of ON Semiconductor
MJW1302A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 50 @ 7A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 1A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 15A volts.
MJW1302A Features
the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
MJW1302A Applications
There are a lot of ON Semiconductor
MJW1302A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJW1302A More Descriptions
15 A, 230 V, 200 Watt, PNP Bipolar Power Junction Transistor
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT 15A 250V 200W PNP
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT 15A 250V 200W PNP
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