ON Semiconductor MJF44H11
- Part Number:
- MJF44H11
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 4538786-MJF44H11
- Description:
- TRANS NPN 80V 10A TO220FP
- ECAD Model:
-
- Datasheet:
- MJF44H11
ON Semiconductor MJF44H11 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF44H11.
- Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating10A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)1μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)5V
- Emitter Base Voltage (VEBO)5V
- hFE Min60
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJF44H11 Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 10A volts.
MJF44H11 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJF44H11 Applications
There are a lot of ON Semiconductor
MJF44H11 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 10A volts.
MJF44H11 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJF44H11 Applications
There are a lot of ON Semiconductor
MJF44H11 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF44H11 More Descriptions
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Bipolar Power Transistor
TRANS NPN 80V 10A TO220FP
RES SMD 84.5K OHM 1% 1/2W 1206
NPN Bipolar Power Transistor
TRANS NPN 80V 10A TO220FP
RES SMD 84.5K OHM 1% 1/2W 1206
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
13 October 2023
Universal Logic Gate Chip SN7406N: Equivalent, Working Principle and Package
Ⅰ. What is SN7406N?Ⅱ. Symbol, footprint and pinout of SN7406NⅢ. Technical parameters of SN7406NⅣ. Features of SN7406NⅤ. Working principle of SN7406NⅥ. Dimensions and package of SN7406NⅦ. Manufacturer of... -
13 October 2023
LM3481MM NOPB Converter Features, Pin Configuraiton and Other Details
Ⅰ. Overview of LM3481MM/NOPBⅡ. Symbol and footprint of LM3481MM/NOPBⅢ. Technical parameters of LM3481MM/NOPBⅣ. Features of LM3481MM/NOPBⅤ. Pin configuration of LM3481MM/NOPBⅥ. Application of LM3481MM/NOPBⅦ. How to improve the efficiency... -
16 October 2023
What Is H1102N Pulse Ethernet Transformer?
Ⅰ. What is a transformer?Ⅱ. Overview of H1102NLⅢ. Pin configuration, symbol and footprint of H1102NLⅣ. Technical parameters of H1102NLⅤ. Features of H1102NLⅥ. Working principle of H1102NLⅦ. Dimensions and... -
16 October 2023
BD139 Transistor Equivalent, Technical Parameters and Applications
Ⅰ. Overview of BD139Ⅱ. BD139 symbol, footprint and pin configurationⅢ. Technical parameters of BD139Ⅳ. Features of BD139Ⅴ. Working principle of BD139 transistorⅥ. Circuit of BD139 transistor power amplifierⅦ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.