STMicroelectronics MJE802
- Part Number:
- MJE802
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585915-MJE802
- Description:
- TRANS NPN DARL 80V 4A SOT-32
- Datasheet:
- MJE802
STMicroelectronics MJE802 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJE802.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation40W
- Current Rating4A
- Base Part NumberMJE802
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A 3V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency1MHz
- Collector Emitter Saturation Voltage3V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Height10.8mm
- Length7.8mm
- Width2.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE802 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 1MHz.During maximum operation, collector current can be as low as 4A volts.
MJE802 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz
MJE802 Applications
There are a lot of STMicroelectronics
MJE802 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 1MHz.During maximum operation, collector current can be as low as 4A volts.
MJE802 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz
MJE802 Applications
There are a lot of STMicroelectronics
MJE802 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE802 More Descriptions
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, DARL., NPN 80V 4A, SOT-32 PKG
TRANS DARL NPN 80V 4A SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Style: SOT-32; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Ic Continuous a Max: 1.5A; Hfe Min: 750; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Through Hole; Transistor Type: Power Darlington
TRANSISTOR, DARL., NPN 80V 4A, SOT-32 PKG
TRANS DARL NPN 80V 4A SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Style: SOT-32; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Ic Continuous a Max: 1.5A; Hfe Min: 750; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Through Hole; Transistor Type: Power Darlington
The three parts on the right have similar specifications to MJE802.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
MJE802Through HoleThrough HoleTO-225AA, TO-126-334.535924gSILICON150°C TJTubee3yesObsolete1 (Unlimited)3Through HoleEAR99Matte Tin (Sn)Other Transistors80V40W4AMJE8021NPNSingle40WISOLATEDSWITCHINGNPN - Darlington80V4A750 @ 1.5A 3V100nA3V @ 40mA, 4A80V1MHz3V80V5V10010.8mm7.8mm2.7mmNo SVHCNoROHS3 CompliantLead Free-----
-
-Through HoleTO-225AA, TO-126-3---150°C TJTube--Obsolete1 (Unlimited)--------MJE803------NPN - Darlington--750 @ 2A 3V100μA2.8V @ 40mA, 2A-------------TO-126-340W80V4A
-
-Through HoleTO-225AA, TO-126-3---150°C TJTube--Obsolete1 (Unlimited)---------------NPN - Darlington--750 @ 2A 3V100μA2.8V @ 40mA, 2A--------------40W60V4A
-
-Through HoleTO-225AA, TO-126-3---150°C TJTube--Obsolete1 (Unlimited)--------MJE802------NPN - Darlington--750 @ 1.5A 3V100μA2.5V @ 30mA, 1.5A--------------40W80V4A
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