ON Semiconductor MJE700G

Name: MJE700G
Brand: ON Semiconductor
SKU: 2845165-MJE700G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE700G

Manufacturer:: ON Semiconductor

Ventron No:: 2845165-MJE700G

Description:: TRANS PNP DARL 60V 4A TO225AA

ECAD Model:

Datasheet:: MJE700G

Specifications

ON Semiconductor MJE700G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE700G.

Lifecycle Status
ACTIVE (Last Updated: 14 hours ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
BUILT IN BIAS RESISTOR
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJE700
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
1MHz
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE700G Overview
DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 30mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 1MHz.In extreme cases, the collector current can be as low as 4A volts.

MJE700G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz

MJE700G Applications
There are a lot of ON Semiconductor
MJE700G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE700G More Descriptions

4.0 A, 60 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin
MJE Series 60 V 4 A Darlington Complementary Silicon Power Transistor - TO-225
Transistor, Darlington,Si,PNP,Power, Switch,Vo 60VDC,VI 5VDC,Io 4ADC,PD 40W | ON Semiconductor MJE700G
BIPOLAR TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Style: TO-225;

Product Comparison

The three parts on the right have similar specifications to MJE700G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
MJE700G

ON Semiconductor

ACTIVE (Last Updated: 14 hours ago)

2 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

2001

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

BUILT IN BIAS RESISTOR

Other Transistors

-60V

40W

260

-4A

40

MJE700

3

1

PNP

Single

40W

AMPLIFIER

Halogen Free

PNP - Darlington

60V

4A

750 @ 1.5A 3V

100μA

2.5V @ 30mA, 1.5A

60V

1MHz

2.5V

60V

5V

100

11.0998mm

7.7978mm

2.9972mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
MJE701STU

Fairchild/ON Semiconductor

-

-

Through Hole

TO-225AA, TO-126-3

-

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP - Darlington

-

-

750 @ 2A 3V

100μA

2.8V @ 40mA, 2A

-

-

-

-

-

-

-

-

-

-

-

-

-

40W

60V

4A

MJE700G vs MJE701STU
MJE700STU

Fairchild/ON Semiconductor

-

-

Through Hole

TO-225AA, TO-126-3

-

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

MJE700

-

-

-

-

-

-

-

PNP - Darlington

-

-

750 @ 1.5A 3V

100μA

2.5V @ 30mA, 1.5A

-

-

-

-

-

-

-

-

-

-

-

-

-

40W

60V

4A

MJE700G vs MJE700STU
MJE702STU

Fairchild/ON Semiconductor

-

-

Through Hole

TO-225AA, TO-126-3

-

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

MJE702

-

-

-

-

-

-

-

PNP - Darlington

-

-

750 @ 1.5A 3V

100μA

2.5V @ 30mA, 1.5A

-

-

-

-

-

-

-

-

-

-

-

-

-

40W

80V

4A

MJE700G vs MJE702STU

Certification

Related parts for MJE700G

MJE702G

ON Semiconductor

TRANS PNP DARL 80V 4A TO225AA
MJE703G

ON Semiconductor

TRANS PNP DARL 80V 4A TO-225
MJE700G

ON Semiconductor

TRANS PNP DARL 60V 4A TO225AA
MJE701STU

Fairchild/ON Semiconductor

TRANS PNP DARL 60V 4A TO126
MJE703STU

Fairchild/ON Semiconductor

TRANS PNP DARL 80V 4A TO126
MJE700STU

Fairchild/ON Semiconductor

TRANS PNP DARL 60V 4A TO126
MJE702STU

Fairchild/ON Semiconductor

TRANS PNP DARL 80V 4A TO126

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MJE700G Specification

Part Number	Manufacturers	Description	Stock	Price
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 3-Pin(3 Tab) TO-225 Bo RoHS: Compliant	4990	1 $0.4424 10 $0.3778 100 $0.2493 1000 $0.2079 2500 $0.1915 10000 $0.1823 25000 $0.1786 50000 $0.1761
MJE700G DISTI #MJE700G	ON Semiconductor	TRANS PNP DARL 60V 4A TO225AA RoHS: Compliant	0	1 $0.62 10 $0.534 100 $0.3987 500 $0.31324 1000 $0.24205
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 3-Pin(3 Tab) TO-225 Bo RoHS: Compliant	4990	37 $0.3778 100 $0.2493 1000 $0.2079 2500 $0.1915
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 3-Pin(3 Tab) TO-225 Bu RoHS: Compliant	3000	1 $0.2999 10 $0.2669 25 $0.2399 50 $0.2179 100 $0.1999 500 $0.1849 1000 $0.1709
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 3-Pin(3 Tab) TO-225 Bu RoHS: Compliant	0	1 $0.1769 10 $0.1759 25 $0.1739 50 $0.1729 100 $0.1709 500 $0.1689 1000 $0.1669
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 3-Pin(3 Tab) TO-225 Bu RoHS: Compliant	0	1 $0.614 10 $0.504 100 $0.313 500 $0.279 1000 $0.245 2500 $0.211 10000 $0.198
MJE700G DISTI #MJE700G	ON Semiconductor	DARLINGTON TRANSISTOR, PNP, -60V, TO-225, Transis	0	1 $0.614 10 $0.504 100 $0.313 500 $0.279 1000 $0.245 2500 $0.211 10000 $0.198
MJE700G. DISTI #MJE700G.	ON Semiconductor	BIP C77 PNP 4A 60V FG ROHS COMPLIANT: YES	0	1 $0.626 10 $0.514 100 $0.319 500 $0.279 1000 $0.245 2500 $0.211 10000 $0.198
MJE700G DISTI #MJE700G	ON Semiconductor	Transistor, Darlington, Si, PNP, Power, Switc RoHS: Compliant	0	1 $0.665 100 $0.632 250 $0.6
MJE700G DISTI #MJE700G	ON Semiconductor	MJE Series 60 V 4 A Darlington Complementary Silic RoHS: Compliant	500	100 $0.29 500 $0.205 1000 $0.199 2000 $0.191 3000 $0.187
MJE700G DISTI #MJE700G	ON Semiconductor	Darlington Transistors 4A 60V Bipolar Power PNP RoHS: Compliant	324	1 $0.6 10 $0.49 100 $0.299 1000 $0.231 2500 $0.197
MJE700 DISTI #MJE700	ON Semiconductor	Darlington Transistors 4A 60V Bipolar RoHS: Not Compliant	0
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 3-Pin(3 Tab) TO-225 Bu RoHS: Compliant	340	70 $0.73 100 $0.53 250 $0.336 1000 $0.268 2500 $0.256 10000 $0.219 25000 $0.214 50000 $0.199
MJE700G DISTI #MJE700G	ON Semiconductor		86
MJE700G DISTI #MJE700G	ON Semiconductor	Transistor: PNP, bipolar, Darlington, 60V, 4A,	389	3 $0.42 10 $0.35 25 $0.28 100 $0.24
MJE700G DISTI #MJE700G	ON Semiconductor	BIPOLAR TRANSISTOR RoHS: Compliant	0	1 $0.95 10 $0.775 100 $0.474 1000 $0.366 2500 $0.312 10000 $0.291 25000 $0.276 50000 $0.269
MJE700G DISTI #MJE700G		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO,1 RoHS: Compliant	673	500 $0.58 673 $0.5273
MJE700G DISTI #MJE700G	ON Semiconductor	Trans Darlington PNP 60V 4A 40000mW 3-Pin(3 Tab) T RoHS: Compliant	5197	10 $0.3782 100 $0.2626 500 $0.241 1000 $0.2053

ON Semiconductor MJE700G

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