ON Semiconductor MJE182G

Name: MJE182G
Brand: ON Semiconductor
SKU: 2463256-MJE182G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE182G

Manufacturer:: ON Semiconductor

Ventron No:: 2463256-MJE182G

Description:: TRANS NPN 80V 3A TO225AA

ECAD Model:

Datasheet:: MJE182G

Specifications

ON Semiconductor MJE182G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE182G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
12.5W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJE182
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
12.5W
Power - Max
1.5W
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
1.7V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
hFE Min
50
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE182G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

MJE182G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz

MJE182G Applications
There are a lot of ON Semiconductor
MJE182G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE182G More Descriptions

Transistor, Bipolar,Si,NPN,Power,VCEO 80VDC,IC 3A,PD 1.5W,TO-225AA,VCBO 80VDC
3.0 A NPN Bipolar Power Transistor 80 V
80V 1.5W 50@100mA,1V 3A NPN TO-225 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 3A 12500mW 3-Pin(3 Tab) TO-225 Box
MJE Series 100 V 3 A NPN Complementary Plastic Silicon Power Transistor TO-225AA
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
POWER TRANSISTOR, NPN, 80V, TO-225; Tran; POWER TRANSISTOR, NPN, 80V, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 12.5W; DC Collector Current: 3A; DC Current Gain hFE: 50; No. of Pins: 3Pins; MSL: -

Product Comparison

The three parts on the right have similar specifications to MJE182G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

Qualification Status

Case Connection

JEDEC-95 Code

Mount

Additional Feature

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
MJE182G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

80V

12.5W

260

3A

50MHz

40

MJE182

3

1

Single

12.5W

1.5W

SWITCHING

50MHz

NPN

NPN

80V

3A

50 @ 100mA 1V

100nA ICBO

1.7V @ 600mA, 3A

80V

50MHz

1.7V

100V

7V

50

11.0998mm

7.7978mm

2.9972mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE15034

ON Semiconductor

OBSOLETE (Last Updated: 2 weeks ago)

-

-

Through Hole

TO-220-3

NO

3

-

SILICON

-65°C~150°C TJ

Tube

2004

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

350V

2W

240

4A

30MHz

30

-

3

1

Single

2W

-

AMPLIFIER

30MHz

NPN

NPN

350V

4A

10 @ 2A 5V

10μA ICBO

500mV @ 100mA, 1A

350V

30MHz

500mV

350V

5V

100

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

COLLECTOR

TO-220AB

-

-

-

-

-

-

-

-

-

MJE182G vs MJE15034
MJE13009

ON Semiconductor

OBSOLETE (Last Updated: 1 week ago)

-

-

Through Hole

TO-220-3

-

3

-

SILICON

-65°C~150°C TJ

Tube

2006

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

400V

2W

240

12A

-

30

-

3

1

Single

2W

-

SWITCHING

4MHz

NPN

NPN

3V

12A

8 @ 5A 5V

-

3V @ 3A, 12A

400V

4MHz

1V

700V

9V

8

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

COLLECTOR

TO-220AB

Through Hole

LEADFORM OPTIONS ARE AVAILABLE

-

-

-

-

-

-

-

MJE182G vs MJE13009
MJE15029

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Through Hole

TO-220-3

-

3

-

-

-65°C~150°C TJ

Tube

2006

-

-

Obsolete

1 (Unlimited)

-

-

-

120V

50W

-

8A

30MHz

-

-

-

1

Single

50W

50W

-

30MHz

-

PNP

120V

8A

20 @ 4A 2V

100μA

500mV @ 100mA, 1A

120V

-

500mV

120V

5V

40

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

TO-220AB

150°C

-65°C

PNP

120V

8A

30MHz

MJE182G vs MJE15029

Certification

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MJE182G Specification

Part Number	Manufacturers	Description	Stock	Price
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	5208	1 $0.4337 10 $0.3699 100 $0.2428 1000 $0.1665 2500 $0.1499 10000 $0.1419 25000 $0.1277 50000 $0.1159
MJE182G DISTI #	ON Semiconductor	TRANS NPN 80V 3A TO225AA RoHS: Compliant	1769	1 $0.54 10 $0.465 100 $0.3475 500 $0.27304 1000 $0.21099
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	33568	14 $0.5228 50 $0.3481 100 $0.2843 500 $0.241
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	5212	48 $0.3699 100 $0.2428 1000 $0.1921
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 3-Pin(3 Tab) TO-225 Box (A RoHS: Compliant	3000	500 $0.43223 1000 $0.16624 1500 $0.16008 2500 $0.15437 5000 $0.14904 12500 $0.14408 25000 $0.14171
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 3-Pin(3 Tab) TO-225 Box - RoHS: Compliant	0	1 $0.1409 10 $0.1399 25 $0.1389 50 $0.1379 100 $0.1359 500 $0.1339 1000 $0.1329
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 3-Pin(3 Tab) TO-225 Box - RoHS: Compliant	0	1 $0.532 10 $0.439 100 $0.273 500 $0.243 1000 $0.213 2500 $0.184 10000 $0.172
MJE182G DISTI #	ON Semiconductor	POWER TRANSISTOR, NPN, 80V, TO-225, Transistor Po	1506	1 $0.532 10 $0.439 100 $0.273 500 $0.243 1000 $0.213 2500 $0.184 10000 $0.172
MJE182G DISTI #	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 80V, TO-225-3, Transistor	695	1 $0.544 10 $0.449 100 $0.279 500 $0.248 1000 $0.218 2500 $0.188 10000 $0.176
MJE182G. DISTI #	ON Semiconductor	BIP C77 NPN 3A 80V , ROHS COMPLIANT: YES	0	1 $0.543 10 $0.448 100 $0.278 500 $0.243 1000 $0.213 2500 $0.184 10000 $0.172
MJE182G DISTI #	ON Semiconductor	TRANSISTOR, NPN, 80, 100, 7, 3 COLLECTOR, 1 RoHS: Compliant	5	5 $0.18 10 $0.176 25 $0.171
MJE181G DISTI #	ON Semiconductor	Bipolar Transistors - BJT 3A 60V 12.5W NPN RoHS: Compliant	1509	1 $0.52 10 $0.427 100 $0.261 1000 $0.201 2500 $0.172 10000 $0.16 25000 $0.152 50000 $0.148
MJE182G DISTI #	ON Semiconductor	Bipolar Transistors - BJT 3A 80V 12.5W NPN RoHS: Compliant	4218	1 $0.52 10 $0.427 100 $0.261 1000 $0.201 2500 $0.172 10000 $0.16 25000 $0.152 50000 $0.148
MJE182 DISTI #	STMicroelectronics	Bipolar Transistors - BJT NPN Gen Pur Power Sw RoHS: Compliant	0
MJE182G DISTI #	ON Semiconductor		500
MJE182G DISTI #	ON Semiconductor	TRANSISTOR NPN 80V 3A 12.5W 40PF TO225, BX	620	100 $0.263
MJE182G DISTI #	ON Semiconductor	TRANSISTOR NPN 80V 3A 12.5W 40PF TO225, PK	490	10 $0.352 100 $0.263
MJE182G DISTI #	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 80V, TO-225-3 RoHS: Compliant	697	5 $0.373 25 $0.352 100 $0.202 250 $0.179 500 $0.156
MJE182G. DISTI #	ON Semiconductor	POWER TRANSISTOR, NPN, 80V, TO-225 RoHS: Compliant	0	1 $0.924 10 $0.762 100 $0.474 500 $0.422 1000 $0.37
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 12500mW 3-Pin(3 Tab) TO-22 RoHS: Compliant	5212	10 $0.3699 100 $0.2428 500 $0.2281 1000 $0.1907
MJE182G DISTI #	ON Semiconductor	Trans GP BJT NPN 80V 3A 12500mW 3-Pin(3 Tab) TO-22 RoHS: Compliant	33568	1 $1.52 10 $0.406 50 $0.271 100 $0.221 500 $0.187 1000 $0.165
MJE182G DISTI #	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 80V, TO-225-3 RoHS: Compliant	695	1 $0.824 10 $0.676 100 $0.413 1000 $0.319 2500 $0.272 10000 $0.254 25000 $0.241 50000 $0.235
MJE182G. DISTI #	ON Semiconductor	POWER TRANSISTOR, NPN, 80V, TO-225 RoHS: Compliant	2131	1 $0.824 10 $0.676 100 $0.413 1000 $0.319 2500 $0.272 10000 $0.254 25000 $0.241 50000 $0.235

ON Semiconductor MJE182G

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