ON Semiconductor MJE180G

Name: MJE180G
Brand: ON Semiconductor
SKU: 2845298-MJE180G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE180G

Manufacturer:: ON Semiconductor

Ventron No:: 2845298-MJE180G

Description:: TRANS NPN 40V 3A TO225AA

ECAD Model:

Datasheet:: MJE180G

Specifications

ON Semiconductor MJE180G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE180G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
1.5W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJE180
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
12.5W
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
1.7V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
hFE Min
50
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE180G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

MJE180G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz

MJE180G Applications
There are a lot of ON Semiconductor
MJE180G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE180G More Descriptions

3.0 A NPN Bipolar Power Transistor 40 V
MJE Series 60 V 3 A NPN Complementary Plastic Silicon Power Transistor TO-225AA
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3 Tab) TO-225 Box
TRANSISTOR, NPN, 40V, 3A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 12.5W; DC Collector Current: 3A; DC Current Gain hFE: 12hFE; Transistor
Power Transistor, Npn, 40V, To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi MJE180G.

Product Comparison

The three parts on the right have similar specifications to MJE180G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Reach Compliance Code

Qualification Status

Case Connection

JEDEC-95 Code

Additional Feature

Terminal Position

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
MJE180G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

40V

1.5W

260

3A

50MHz

40

MJE180

3

1

Single

12.5W

SWITCHING

50MHz

NPN

NPN

40V

3A

50 @ 100mA 1V

100nA ICBO

1.7V @ 600mA, 3A

40V

50MHz

1.7V

60V

7V

50

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE13007

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 day ago)

-

Through Hole

TO-220-3

NO

3

-

SILICON

-65°C~150°C TJ

Tube

2009

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

400V

80W

240

8A

-

30

-

3

1

Single

80W

SWITCHING

14MHz

NPN

NPN

3V

8A

5 @ 5A 5V

100μA

3V @ 2A, 8A

400V

14MHz

1V

700V

9V

8

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

SWITCHMODE™

not_compliant

Not Qualified

COLLECTOR

TO-220AB

-

-

-

-

-

-

-

-

MJE180G vs MJE13007
MJE18004

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Through Hole

TO-220-3

NO

3

-

SILICON

-65°C~150°C TJ

Tube

2006

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

450V

75W

240

5A

-

30

MJE18004

3

1

Single

-

SWITCHING

13MHz

NPN

NPN

750mV

5A

14 @ 300mA 5V

100μA

750mV @ 500mA, 2.5A

450V

13MHz

920mV

1kV

9V

12

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

SWITCHMODE™

not_compliant

Not Qualified

COLLECTOR

TO-220AB

LEADFORM OPTIONS ARE AVAILABLE

-

-

-

-

-

-

-

MJE180G vs MJE18004
MJE18002

ON Semiconductor

-

-

Through Hole

TO-220-3

NO

-

-

SILICON

-65°C~150°C TJ

Tube

-

e0

no

Obsolete

3 (168 Hours)

3

-

TIN LEAD

-

-

-

240

-

-

30

-

3

1

-

-

SWITCHING

-

NPN

NPN

-

-

14 @ 200mA 5V

100μA

500mV @ 200mA, 1A

-

13MHz

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

SWITCHMODE™

-

COMMERCIAL

COLLECTOR

TO-220AB

LEADFORM OPTIONS ARE AVAILABLE

SINGLE

R-PSFM-T3

SINGLE

50W

450V

2A

13MHz

MJE180G vs MJE18002

Certification

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MJE180G Specification

Part Number	Manufacturers	Description	Stock	Price
MJE180G DISTI #V36:1790_07284255	ON Semiconductor	Trans GP BJT NPN 40V 3A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	31	1 $0.5626 10 $0.4648 100 $0.2549 500 $0.2503 1000 $0.2013 2500 $0.1716 10000 $0.1597
MJE180G DISTI #MJE180GOS-ND	ON Semiconductor	TRANS NPN 40V 3A TO225AA RoHS: Compliant	182	1 $0.54 10 $0.466 100 $0.3478 500 $0.27328 1000 $0.21117
MJE180G DISTI #25632344	ON Semiconductor	Trans GP BJT NPN 40V 3A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	36000	3000 $0.1554 4000 $0.1535
MJE180G DISTI #MJE180G	ON Semiconductor	Trans GP BJT NPN 40V 3A 3-Pin(3 Tab) TO-225 Box (A RoHS: Compliant	0	1 $0.2329 10 $0.2019 25 $0.1789 50 $0.1729 100 $0.1699 500 $0.1659 1000 $0.1639
MJE180G DISTI #MJE180G	ON Semiconductor	Trans GP BJT NPN 40V 3A 3-Pin(3 Tab) TO-225 Box - RoHS: Compliant	0	3000 $0.15464 6000 $0.15364 9000 $0.15167 15000 $0.14975 30000 $0.14605
MJE180G DISTI #MJE180G	ON Semiconductor	Trans GP BJT NPN 40V 3A 3-Pin(3 Tab) TO-225 Box - RoHS: Compliant	0	1924 $0.1689 3848 $0.1679 5772 $0.1659 9620 $0.1639 19240 $0.1599
MJE180G DISTI #42K1290	ON Semiconductor	Trans GP BJT NPN 40V 3A 3-Pin(3 Tab) TO-225 Box - RoHS: Compliant	0	1 $0.532 10 $0.44 100 $0.273 500 $0.244 1000 $0.214 2500 $0.184 10000 $0.172
MJE180G DISTI #42K1290	ON Semiconductor	POWER TRANSISTOR, NPN, 40V, TO-225, Transistor Po	1046	1 $0.532 10 $0.44 100 $0.273 500 $0.244 1000 $0.214 2500 $0.184 10000 $0.172
MJE180G. DISTI #27AC8974	ON Semiconductor	BIP C77 NPN 3A 40V ROHS COMPLIANT: YES	0	1 $0.543 10 $0.449 100 $0.279 500 $0.244 1000 $0.214 2500 $0.184 10000 $0.172
MJE180G DISTI #	ON Semiconductor	MJE Series 60 V 3 A NPN Complementary Plastic Sili RoHS: Compliant	904	100 $0.23 500 $0.178 1000 $0.173 2000 $0.168 4000 $0.163
MJE180G DISTI #863-MJE180G	ON Semiconductor	Bipolar Transistors - BJT 3A 40V 12.5W NPN RoHS: Compliant	1808	1 $0.52 10 $0.428 100 $0.261 1000 $0.202 2500 $0.172
MJE180G DISTI #	ON Semiconductor	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1 RoHS: Compliant	46272	1 $0.21 25 $0.2 100 $0.19 500 $0.18 1000 $0.17
MJE180G DISTI #2845310	ON Semiconductor	TRANSISTOR, NPN, 40V, 3A, TO-225 RoHS: Compliant	1395	5 $0.706 100 $0.528 500 $0.415 1000 $0.321
MJE180G DISTI #2845310	ON Semiconductor	TRANSISTOR, NPN, 40V, 3A, TO-225	1415	5 $0.356 25 $0.335 100 $0.191 250 $0.169 500 $0.147
MJE180G DISTI #XSFP00000148627		RoHS: Compliant	488	562 $0.356

ON Semiconductor MJE180G

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