Fairchild/ON Semiconductor MJE172STU
- Part Number:
- MJE172STU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463202-MJE172STU
- Description:
- TRANS PNP 80V 3A TO-126
- Datasheet:
- MJE172STU
Fairchild/ON Semiconductor MJE172STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJE172STU.
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Supplier Device PackageTO-126-3
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.5W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)3A
- Frequency - Transition50MHz
- RoHS StatusROHS3 Compliant
MJE172STU Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.Product comes in the supplier's device package TO-126-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MJE172STU Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the supplier device package of TO-126-3
MJE172STU Applications
There are a lot of Rochester Electronics, LLC
MJE172STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.Product comes in the supplier's device package TO-126-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MJE172STU Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the supplier device package of TO-126-3
MJE172STU Applications
There are a lot of Rochester Electronics, LLC
MJE172STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE172STU More Descriptions
Tube Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 100mA 1V 100nA ICBO 12.5W 50MHz
MJE Series PNP 12.5 W 80 V 3 A Epitaxial Silicon Transistor - TO-126-3
3.0 A, 80 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
80V 1.5W 3A 50@100mA1V 50MHz 1.7V@3A600mA PNP 150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Epitaxial Sil
TRANSISTOR, BIPOLAR, PNP, -80V, TO126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Power Dissipation Pd:12.5W; DC Collector Current:-3A; DC Current Gain hFE:12; Operating Temperature Max:150°C; Transistor Case Style:TO-126; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
MJE Series PNP 12.5 W 80 V 3 A Epitaxial Silicon Transistor - TO-126-3
3.0 A, 80 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
80V 1.5W 3A 50@100mA1V 50MHz 1.7V@3A600mA PNP 150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Epitaxial Sil
TRANSISTOR, BIPOLAR, PNP, -80V, TO126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Power Dissipation Pd:12.5W; DC Collector Current:-3A; DC Current Gain hFE:12; Operating Temperature Max:150°C; Transistor Case Style:TO-126; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
The three parts on the right have similar specifications to MJE172STU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusSurface MountTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyLifecycle StatusNumber of PinsPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeView Compare
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MJE172STUThrough HoleTO-225AA, TO-126-3TO-126-3150°C TJTubeLast Time Buy1 (Unlimited)1.5WPNP50 @ 100mA 1V100nA ICBO1.7V @ 600mA, 3A80V3A50MHzROHS3 Compliant-------------------------------------------
-
Through HoleTO-220-3--65°C~150°C TJTubeObsolete3 (168 Hours)50WNPN14 @ 200mA 5V100μA500mV @ 200mA, 1A450V2A13MHzNon-RoHS CompliantNOSILICONSWITCHMODE™e0no3TIN LEADLEADFORM OPTIONS ARE AVAILABLESINGLE240303R-PSFM-T3COMMERCIAL1SINGLECOLLECTORSWITCHINGNPNTO-220AB13MHz---------------------
-
-TO-220C--Tube-packed----------RoHS Compliant------------------------------------------
-
Through HoleTO-220-3--65°C~150°C TJTubeObsolete1 (Unlimited)-NPN10 @ 2A 5V10μA ICBO500mV @ 100mA, 1A---Non-RoHS CompliantNOSILICON-e0no3Tin/Lead (Sn/Pb)--240303-Not Qualified1-COLLECTORAMPLIFIERNPNTO-220AB30MHzOBSOLETE (Last Updated: 2 weeks ago)32004EAR99Other Transistors350V2Wnot_compliant4A30MHzSingle2W30MHz350V4A350V500mV350V5V100Contains Lead
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