MJE172STU

Fairchild/ON Semiconductor MJE172STU

Part Number:
MJE172STU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2463202-MJE172STU
Description:
TRANS PNP 80V 3A TO-126
ECAD Model:
Datasheet:
MJE172STU

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Specifications
Fairchild/ON Semiconductor MJE172STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJE172STU.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Supplier Device Package
    TO-126-3
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Power - Max
    1.5W
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.7V @ 600mA, 3A
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    3A
  • Frequency - Transition
    50MHz
  • RoHS Status
    ROHS3 Compliant
Description
MJE172STU Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.Product comes in the supplier's device package TO-126-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

MJE172STU Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the supplier device package of TO-126-3


MJE172STU Applications
There are a lot of Rochester Electronics, LLC
MJE172STU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE172STU More Descriptions
Tube Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 100mA 1V 100nA ICBO 12.5W 50MHz
MJE Series PNP 12.5 W 80 V 3 A Epitaxial Silicon Transistor - TO-126-3
3.0 A, 80 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
80V 1.5W 3A 50@100mA1V 50MHz 1.7V@3A600mA PNP 150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Epitaxial Sil
TRANSISTOR, BIPOLAR, PNP, -80V, TO126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Power Dissipation Pd:12.5W; DC Collector Current:-3A; DC Current Gain hFE:12; Operating Temperature Max:150°C; Transistor Case Style:TO-126; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Product Comparison
The three parts on the right have similar specifications to MJE172STU.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    RoHS Status
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Transition Frequency
    Lifecycle Status
    Number of Pins
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Reach Compliance Code
    Current Rating
    Frequency
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Lead Free
    View Compare
  • MJE172STU
    MJE172STU
    Through Hole
    TO-225AA, TO-126-3
    TO-126-3
    150°C TJ
    Tube
    Last Time Buy
    1 (Unlimited)
    1.5W
    PNP
    50 @ 100mA 1V
    100nA ICBO
    1.7V @ 600mA, 3A
    80V
    3A
    50MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE18002
    Through Hole
    TO-220-3
    -
    -65°C~150°C TJ
    Tube
    Obsolete
    3 (168 Hours)
    50W
    NPN
    14 @ 200mA 5V
    100μA
    500mV @ 200mA, 1A
    450V
    2A
    13MHz
    Non-RoHS Compliant
    NO
    SILICON
    SWITCHMODE™
    e0
    no
    3
    TIN LEAD
    LEADFORM OPTIONS ARE AVAILABLE
    SINGLE
    240
    30
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE
    COLLECTOR
    SWITCHING
    NPN
    TO-220AB
    13MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE15030
    -
    TO-220C
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE15034
    Through Hole
    TO-220-3
    -
    -65°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    NPN
    10 @ 2A 5V
    10μA ICBO
    500mV @ 100mA, 1A
    -
    -
    -
    Non-RoHS Compliant
    NO
    SILICON
    -
    e0
    no
    3
    Tin/Lead (Sn/Pb)
    -
    -
    240
    30
    3
    -
    Not Qualified
    1
    -
    COLLECTOR
    AMPLIFIER
    NPN
    TO-220AB
    30MHz
    OBSOLETE (Last Updated: 2 weeks ago)
    3
    2004
    EAR99
    Other Transistors
    350V
    2W
    not_compliant
    4A
    30MHz
    Single
    2W
    30MHz
    350V
    4A
    350V
    500mV
    350V
    5V
    100
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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