ON Semiconductor MJE172G
- Part Number:
- MJE172G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465329-MJE172G
- Description:
- TRANS PNP 80V 3A TO225AA
- Datasheet:
- MJE172G
ON Semiconductor MJE172G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE172G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation1.5W
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJE172
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation12.5W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1.7V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min50
- Height11.1mm
- Length7.8mm
- Width3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE172G More Descriptions
Transistor, Bipolar,Si,PNP,Power,VCEO 80VDC,IC 3A,PD 1.5W,TO-225AA,VCBO 80VDC
3.0 A, 80 V PNP Bipolar Power Transistor
MJE Series 100 V 3 A PNP Complementary Plastic Silicon Power Transistor TO-225AA
Trans GP BJT PNP 80V 3A 12500mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans General Purpose BJT PNP 80 Volt 3A 3-Pin TO-225
TRANSISTOR, BIPOL, PNP, 80V, TO-225-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; Tran
3.0 A, 80 V PNP Bipolar Power Transistor
MJE Series 100 V 3 A PNP Complementary Plastic Silicon Power Transistor TO-225AA
Trans GP BJT PNP 80V 3A 12500mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans General Purpose BJT PNP 80 Volt 3A 3-Pin TO-225
TRANSISTOR, BIPOL, PNP, 80V, TO-225-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; Tran
The three parts on the right have similar specifications to MJE172G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminal FinishAdditional FeatureReach Compliance CodeQualification StatusCase ConnectionJEDEC-95 CodeView Compare
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MJE172GACTIVE (Last Updated: 4 days ago)6 WeeksTinThrough HoleTO-225AA, TO-126-3NO34.535924gSILICON-65°C~150°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Other Transistors-80V1.5W2603A50MHz40MJE17231Single12.5WSWITCHING50MHzPNPPNP80V3A50 @ 100mA 1V100nA ICBO1.7V @ 600mA, 3A80V50MHz1.7V100V7V5011.1mm7.8mm3mmNo SVHCNoROHS3 CompliantLead Free--------
-
LAST SHIPMENTS (Last Updated: 1 week ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Other Transistors450V75W2405A-30MJE1800431Single-SWITCHING13MHzNPNNPN750mV5A14 @ 300mA 5V100μA750mV @ 500mA, 2.5A450V13MHz920mV1kV9V12-----Non-RoHS CompliantContains LeadSWITCHMODE™Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEnot_compliantNot QualifiedCOLLECTORTO-220AB
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----TO-220C-----Tube-packed---------------------------------------RoHS Compliant--------
-
OBSOLETE (Last Updated: 2 weeks ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2004e0noObsolete1 (Unlimited)3EAR99Other Transistors350V2W2404A30MHz30-31Single2WAMPLIFIER30MHzNPNNPN350V4A10 @ 2A 5V10μA ICBO500mV @ 100mA, 1A350V30MHz500mV350V5V100-----Non-RoHS CompliantContains Lead-Tin/Lead (Sn/Pb)-not_compliantNot QualifiedCOLLECTORTO-220AB
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