MJE172G

ON Semiconductor MJE172G

Part Number:
MJE172G
Manufacturer:
ON Semiconductor
Ventron No:
2465329-MJE172G
Description:
TRANS PNP 80V 3A TO225AA
ECAD Model:
Datasheet:
MJE172G

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Specifications
ON Semiconductor MJE172G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE172G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -80V
  • Max Power Dissipation
    1.5W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    3A
  • Frequency
    50MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJE172
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    12.5W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.7V @ 600mA, 3A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    1.7V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    50
  • Height
    11.1mm
  • Length
    7.8mm
  • Width
    3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz


MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE172G More Descriptions
Transistor, Bipolar,Si,PNP,Power,VCEO 80VDC,IC 3A,PD 1.5W,TO-225AA,VCBO 80VDC
3.0 A, 80 V PNP Bipolar Power Transistor
MJE Series 100 V 3 A PNP Complementary Plastic Silicon Power Transistor TO-225AA
Trans GP BJT PNP 80V 3A 12500mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans General Purpose BJT PNP 80 Volt 3A 3-Pin TO-225
TRANSISTOR, BIPOL, PNP, 80V, TO-225-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; Tran
Product Comparison
The three parts on the right have similar specifications to MJE172G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Terminal Finish
    Additional Feature
    Reach Compliance Code
    Qualification Status
    Case Connection
    JEDEC-95 Code
    View Compare
  • MJE172G
    MJE172G
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Tin
    Through Hole
    TO-225AA, TO-126-3
    NO
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -80V
    1.5W
    260
    3A
    50MHz
    40
    MJE172
    3
    1
    Single
    12.5W
    SWITCHING
    50MHz
    PNP
    PNP
    80V
    3A
    50 @ 100mA 1V
    100nA ICBO
    1.7V @ 600mA, 3A
    80V
    50MHz
    1.7V
    100V
    7V
    50
    11.1mm
    7.8mm
    3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE18004
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    -
    Through Hole
    TO-220-3
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    450V
    75W
    240
    5A
    -
    30
    MJE18004
    3
    1
    Single
    -
    SWITCHING
    13MHz
    NPN
    NPN
    750mV
    5A
    14 @ 300mA 5V
    100μA
    750mV @ 500mA, 2.5A
    450V
    13MHz
    920mV
    1kV
    9V
    12
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SWITCHMODE™
    Tin/Lead (Sn/Pb)
    LEADFORM OPTIONS ARE AVAILABLE
    not_compliant
    Not Qualified
    COLLECTOR
    TO-220AB
  • MJE15030
    -
    -
    -
    -
    TO-220C
    -
    -
    -
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE15034
    OBSOLETE (Last Updated: 2 weeks ago)
    -
    -
    Through Hole
    TO-220-3
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2004
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    350V
    2W
    240
    4A
    30MHz
    30
    -
    3
    1
    Single
    2W
    AMPLIFIER
    30MHz
    NPN
    NPN
    350V
    4A
    10 @ 2A 5V
    10μA ICBO
    500mV @ 100mA, 1A
    350V
    30MHz
    500mV
    350V
    5V
    100
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    Tin/Lead (Sn/Pb)
    -
    not_compliant
    Not Qualified
    COLLECTOR
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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