ON Semiconductor MJE171
- Part Number:
- MJE171
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466846-MJE171
- Description:
- TRANS PNP 60V 3A TO225AA
- Datasheet:
- MJE171
ON Semiconductor MJE171 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE171.
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max12.5W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)3A
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusNon-RoHS Compliant
MJE171 Overview
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.7V @ 600mA, 3A.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJE171 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
a transition frequency of 50MHz
MJE171 Applications
There are a lot of Rochester Electronics, LLC
MJE171 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.7V @ 600mA, 3A.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJE171 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
a transition frequency of 50MHz
MJE171 Applications
There are a lot of Rochester Electronics, LLC
MJE171 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE171 More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 100mA 1V 3A 12.5W 50MHz
Transistor; PNP; 60 VDC; 80 VDC; 7 VDC; 3 Adc; 1 Adc; 105 W @ degC; 10 degC/W
3.0 A PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Transistor; PNP; 60 VDC; 80 VDC; 7 VDC; 3 Adc; 1 Adc; 105 W @ degC; 10 degC/W
3.0 A PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
The three parts on the right have similar specifications to MJE171.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusNumber of PinsPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyPin CountElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityView Compare
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MJE171Through HoleTO-225AA, TO-126-3NOSILICON-65°C~150°C TJBulke3yesObsolete3 (168 Hours)3MATTE TINSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE12.5WSWITCHINGPNPPNP50 @ 100mA 1V100nA ICBO1.7V @ 600mA, 3A60V3A50MHz50MHzNon-RoHS Compliant----------------------------
-
-TO-220C---Tube-packed-------------------------RoHS Compliant---------------------------
-
Through HoleTO-220-3NOSILICON-65°C~150°C TJTubee0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)-240not_compliant30-Not Qualified1--AMPLIFIERNPNNPN10 @ 2A 5V10μA ICBO500mV @ 100mA, 1A--30MHz-Non-RoHS CompliantOBSOLETE (Last Updated: 2 weeks ago)32004EAR99Other Transistors350V2W4A30MHz3Single2WCOLLECTOR30MHz350V4ATO-220AB350V500mV350V5V100Contains Lead----
-
Through HoleTO-220-3---65°C~150°C TJTube--Obsolete1 (Unlimited)--------1-50W--PNP20 @ 4A 2V100μA500mV @ 100mA, 1A120V8A-30MHzNon-RoHS CompliantLAST SHIPMENTS (Last Updated: 1 week ago)32006--120V50W8A30MHz-Single50W-30MHz120V8A-120V500mV120V5V40Contains LeadTO-220AB150°C-65°CPNP
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