ON Semiconductor MJE170G
- Part Number:
- MJE170G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466662-MJE170G
- Description:
- TRANS PNP 40V 3A TO225AA
- Datasheet:
- MJE170G
ON Semiconductor MJE170G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE170G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation1.5W
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJE170
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation12.5W
- Power - Max1.5W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1.7V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min50
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE170G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.7V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.7V @ 600mA, 3A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).50MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
MJE170G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 2A
a transition frequency of 50MHz
MJE170G Applications
There are a lot of ON Semiconductor
MJE170G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.7V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.7V @ 600mA, 3A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).50MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
MJE170G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 2A
a transition frequency of 50MHz
MJE170G Applications
There are a lot of ON Semiconductor
MJE170G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE170G More Descriptions
3.0 A PNP Bipolar Power Transistor 40 V
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 1500mW 3-Pin(3 Tab) TO-225 Box
TRANSISTOR, PNP, -40V, -3A, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 12.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; Transistor Case Style: TO-225; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 1500mW 3-Pin(3 Tab) TO-225 Box
TRANSISTOR, PNP, -40V, -3A, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 12.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; Transistor Case Style: TO-225; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MJE170G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesAdditional FeatureReach Compliance CodeQualification StatusCase ConnectionJEDEC-95 CodeMountView Compare
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MJE170GACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleTO-225AA, TO-126-3NO34.535924gSILICON-65°C~150°C TJBulk2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-40V1.5W2602A50MHz40MJE17031Single12.5W1.5WSWITCHING50MHzPNPPNP40V3A50 @ 100mA 1V100nA ICBO1.7V @ 600mA, 3A40V50MHz1.7V60V7V506.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free--------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors450V75W2405A-30MJE1800431Single--SWITCHING13MHzNPNNPN750mV5A14 @ 300mA 5V100μA750mV @ 500mA, 2.5A450V13MHz920mV1kV9V12-----Non-RoHS CompliantContains LeadSWITCHMODE™LEADFORM OPTIONS ARE AVAILABLEnot_compliantNot QualifiedCOLLECTORTO-220AB-
-
---TO-220C-----Tube-packed-----------------------------------------RoHS Compliant--------
-
OBSOLETE (Last Updated: 1 week ago)-Through HoleTO-220-3-3-SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors400V2W24012A-30-31Single2W-SWITCHING4MHzNPNNPN3V12A8 @ 5A 5V-3V @ 3A, 12A400V4MHz1V700V9V8-----Non-RoHS CompliantContains Lead-LEADFORM OPTIONS ARE AVAILABLEnot_compliantNot QualifiedCOLLECTORTO-220ABThrough Hole
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