ON Semiconductor MJE170
- Part Number:
- MJE170
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466843-MJE170
- Description:
- TRANS PNP 40V 3A TO225AA
- Datasheet:
- MJE170
ON Semiconductor MJE170 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE170.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation12.5W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-3A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJE170
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1.7V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
- Collector Emitter Breakdown Voltage40V
- Current - Collector (Ic) (Max)3A
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1.7V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min50
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJE170 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MJE170 Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz
MJE170 Applications
There are a lot of ON Semiconductor
MJE170 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MJE170 Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz
MJE170 Applications
There are a lot of ON Semiconductor
MJE170 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE170 More Descriptions
3.0 A PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 3-Pin TO-225 Bulk
Bipolar Transistors - BJT 3A 40V 12.5W PNP
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 3-Pin TO-225 Bulk
Bipolar Transistors - BJT 3A 40V 12.5W PNP
The three parts on the right have similar specifications to MJE170.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSeries:Surface MountSeriesAdditional FeatureCase ConnectionJEDEC-95 CodeTerminal PositionJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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MJE170OBSOLETE (Last Updated: 1 week ago)Through HoleThrough HoleTO-225AA, TO-126-33SILICON-65°C~150°C TJBulk2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.75Other Transistors-40V12.5W240not_compliant-3A30MJE1703Not Qualified1SingleSWITCHING50MHzPNPPNP1.7V3A50 @ 100mA 1V100nA ICBO1.7V @ 600mA, 3A40V3A50MHz1.7V60V7V50Non-RoHS CompliantContains Lead-------------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Through HoleTO-220-33SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)-Other Transistors450V75W240not_compliant5A30MJE180043Not Qualified1SingleSWITCHING13MHzNPNNPN750mV5A14 @ 300mA 5V100μA750mV @ 500mA, 2.5A450V-13MHz920mV1kV9V12Non-RoHS CompliantContains Lead-NOSWITCHMODE™LEADFORM OPTIONS ARE AVAILABLECOLLECTORTO-220AB------
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--Through HoleTO-220-3-SILICON-65°C~150°C TJTube-e0noObsolete3 (168 Hours)3-TIN LEAD----240--30-3COMMERCIAL1-SWITCHING-NPNNPN--14 @ 200mA 5V100μA500mV @ 200mA, 1A-2A13MHz----Non-RoHS Compliant--NOSWITCHMODE™LEADFORM OPTIONS ARE AVAILABLECOLLECTORTO-220ABSINGLER-PSFM-T3SINGLE50W450V13MHz
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