MJE170

ON Semiconductor MJE170

Part Number:
MJE170
Manufacturer:
ON Semiconductor
Ventron No:
2466843-MJE170
Description:
TRANS PNP 40V 3A TO225AA
ECAD Model:
Datasheet:
MJE170

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Specifications
ON Semiconductor MJE170 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE170.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 week ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -40V
  • Max Power Dissipation
    12.5W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MJE170
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    1.7V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.7V @ 600mA, 3A
  • Collector Emitter Breakdown Voltage
    40V
  • Current - Collector (Ic) (Max)
    3A
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    1.7V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    50
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJE170 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

MJE170 Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz


MJE170 Applications
There are a lot of ON Semiconductor
MJE170 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE170 More Descriptions
3.0 A PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 3-Pin TO-225 Bulk
Bipolar Transistors - BJT 3A 40V 12.5W PNP
Product Comparison
The three parts on the right have similar specifications to MJE170.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Series:
    Surface Mount
    Series
    Additional Feature
    Case Connection
    JEDEC-95 Code
    Terminal Position
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Frequency - Transition
    View Compare
  • MJE170
    MJE170
    OBSOLETE (Last Updated: 1 week ago)
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    SILICON
    -65°C~150°C TJ
    Bulk
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.75
    Other Transistors
    -40V
    12.5W
    240
    not_compliant
    -3A
    30
    MJE170
    3
    Not Qualified
    1
    Single
    SWITCHING
    50MHz
    PNP
    PNP
    1.7V
    3A
    50 @ 100mA 1V
    100nA ICBO
    1.7V @ 600mA, 3A
    40V
    3A
    50MHz
    1.7V
    60V
    7V
    50
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE180
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    *
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE18004
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Through Hole
    TO-220-3
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    -
    Other Transistors
    450V
    75W
    240
    not_compliant
    5A
    30
    MJE18004
    3
    Not Qualified
    1
    Single
    SWITCHING
    13MHz
    NPN
    NPN
    750mV
    5A
    14 @ 300mA 5V
    100μA
    750mV @ 500mA, 2.5A
    450V
    -
    13MHz
    920mV
    1kV
    9V
    12
    Non-RoHS Compliant
    Contains Lead
    -
    NO
    SWITCHMODE™
    LEADFORM OPTIONS ARE AVAILABLE
    COLLECTOR
    TO-220AB
    -
    -
    -
    -
    -
    -
  • MJE18002
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    -
    e0
    no
    Obsolete
    3 (168 Hours)
    3
    -
    TIN LEAD
    -
    -
    -
    -
    240
    -
    -
    30
    -
    3
    COMMERCIAL
    1
    -
    SWITCHING
    -
    NPN
    NPN
    -
    -
    14 @ 200mA 5V
    100μA
    500mV @ 200mA, 1A
    -
    2A
    13MHz
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    NO
    SWITCHMODE™
    LEADFORM OPTIONS ARE AVAILABLE
    COLLECTOR
    TO-220AB
    SINGLE
    R-PSFM-T3
    SINGLE
    50W
    450V
    13MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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