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MJE15034G

ON Semiconductor MJE15034G

Part Number:
MJE15034G
Manufacturer:
ON Semiconductor
Ventron No:
2465506-MJE15034G
Description:
TRANS NPN 350V 4A TO220AB
ECAD Model:
Datasheet:
MJE15034G

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Specifications
ON Semiconductor MJE15034G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15034G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    5 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    350V
  • Max Power Dissipation
    2W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4A
  • Frequency
    30MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    30MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    350V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 2A 5V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    350V
  • Transition Frequency
    30MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Height
    9.28mm
  • Length
    10.28mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE15034G Overview
This device has a DC current gain of 10 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 4A volts is possible.

MJE15034G Features
the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 30MHz


MJE15034G Applications
There are a lot of ON Semiconductor
MJE15034G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE15034G More Descriptions
Transistor GP BJT NPN 350V 4A 3-Pin (3 Tab) TO-220AB Rail
MJE Series 350 V 4 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Bipolar Transistor, NPN, 350 V, 4.0 A
Power Bipolar Transistor, 4A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 350V; Transisto; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition
Power Transistor, TO-220, NPN, 350V
TRANSISTOR, NPN, 350V, 4A, TO220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor
Product Comparison
The three parts on the right have similar specifications to MJE15034G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Terminal Finish
    Additional Feature
    Reach Compliance Code
    Base Part Number
    Qualification Status
    Terminal Position
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    View Compare
  • MJE15034G
    MJE15034G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    5 Weeks
    Tin
    Through Hole
    TO-220-3
    NO
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    350V
    2W
    260
    4A
    30MHz
    40
    3
    1
    Single
    2W
    COLLECTOR
    AMPLIFIER
    30MHz
    NPN
    NPN
    350V
    4A
    10 @ 2A 5V
    10μA ICBO
    TO-220AB
    500mV @ 100mA, 1A
    350V
    30MHz
    500mV
    350V
    5V
    100
    9.28mm
    10.28mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE18004
    MJE18004
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    -
    Through Hole
    TO-220-3
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    450V
    75W
    240
    5A
    -
    30
    3
    1
    Single
    -
    COLLECTOR
    SWITCHING
    13MHz
    NPN
    NPN
    750mV
    5A
    14 @ 300mA 5V
    100μA
    TO-220AB
    750mV @ 500mA, 2.5A
    450V
    13MHz
    920mV
    1kV
    9V
    12
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SWITCHMODE™
    Tin/Lead (Sn/Pb)
    LEADFORM OPTIONS ARE AVAILABLE
    not_compliant
    MJE18004
    Not Qualified
    -
    -
    -
    -
    -
    -
    -
    MJE15034G vs MJE18004
  • MJE18002
    MJE18002
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    -
    SILICON
    -65°C~150°C TJ
    Tube
    -
    e0
    no
    Obsolete
    3 (168 Hours)
    3
    -
    -
    -
    -
    240
    -
    -
    30
    3
    1
    -
    -
    COLLECTOR
    SWITCHING
    -
    NPN
    NPN
    -
    -
    14 @ 200mA 5V
    100μA
    TO-220AB
    500mV @ 200mA, 1A
    -
    13MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SWITCHMODE™
    TIN LEAD
    LEADFORM OPTIONS ARE AVAILABLE
    -
    -
    COMMERCIAL
    SINGLE
    R-PSFM-T3
    SINGLE
    50W
    450V
    2A
    13MHz
    MJE15034G vs MJE18002
  • MJE15034
    MJE15034
    ON Semiconductor
    OBSOLETE (Last Updated: 2 weeks ago)
    -
    -
    Through Hole
    TO-220-3
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2004
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    350V
    2W
    240
    4A
    30MHz
    30
    3
    1
    Single
    2W
    COLLECTOR
    AMPLIFIER
    30MHz
    NPN
    NPN
    350V
    4A
    10 @ 2A 5V
    10μA ICBO
    TO-220AB
    500mV @ 100mA, 1A
    350V
    30MHz
    500mV
    350V
    5V
    100
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    Tin/Lead (Sn/Pb)
    -
    not_compliant
    -
    Not Qualified
    -
    -
    -
    -
    -
    -
    -
    MJE15034G vs MJE15034
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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