ON Semiconductor MJE15032G
- Part Number:
- MJE15032G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465473-MJE15032G
- Description:
- TRANS NPN 250V 8A TO220AB
- ECAD Model:
-
- Datasheet:
- MJE15032G
ON Semiconductor MJE15032G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15032G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC250V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A 5V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)250V
- Emitter Base Voltage (VEBO)5V
- hFE Min10
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE15032G Description
The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor that is used in audio amplifiers as a high-frequency driver.
MJE15032G Features
High DC current gain
High current gain bandwidth
Epoxy meets UL 94V-0 rating
MJE15032G Applications
Audio
Amplifier
The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor that is used in audio amplifiers as a high-frequency driver.
MJE15032G Features
High DC current gain
High current gain bandwidth
Epoxy meets UL 94V-0 rating
MJE15032G Applications
Audio
Amplifier
MJE15032G More Descriptions
Trans GP BJT NPN 250V 8A 2000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 250 V 8 A NPN Complementary Silicon Plastic Power Transistor - TO-220
Bipolar Transistor, NPN, 250 V, 8.0 A
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 220VDC, IC 8A, PD 50W, TO-220AB, VCBO 250VDC | ON Semiconductor MJE15032G
Bipolar Transistors - BJT 8A 250V 50W NPN
Transistor NPN 8A/250V 50W TO220 MJE 15032G
TO-220C Bipolar Transistors - BJT ROHS
MJE Series 250 V 8 A NPN Complementary Silicon Plastic Power Transistor - TO-220
Bipolar Transistor, NPN, 250 V, 8.0 A
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 220VDC, IC 8A, PD 50W, TO-220AB, VCBO 250VDC | ON Semiconductor MJE15032G
Bipolar Transistors - BJT 8A 250V 50W NPN
Transistor NPN 8A/250V 50W TO220 MJE 15032G
TO-220C Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to MJE15032G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeries:SeriesTerminal FinishAdditional FeatureTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityView Compare
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MJE15032GACTIVE (Last Updated: 4 days ago)7 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2004e3yesActive1 (Unlimited)3EAR99Other Transistors250V2W2608A30MHz4031Single2WCOLLECTORAMPLIFIER30MHzNPNNPN250V8A10 @ 2A 5V10μA ICBOTO-220AB500mV @ 100mA, 1A250V30MHz500mV250V5V1015.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free----------------- -
-----------------------------------------------------*---------------
-
---Through HoleTO-220-3NO--SILICON-65°C~150°C TJTube-e0noObsolete3 (168 Hours)3----240--3031--COLLECTORSWITCHING-NPNNPN--14 @ 200mA 5V100μATO-220AB500mV @ 200mA, 1A-13MHz---------Non-RoHS Compliant--SWITCHMODE™TIN LEADLEADFORM OPTIONS ARE AVAILABLESINGLER-PSFM-T3COMMERCIALSINGLE50W450V2A13MHz----
-
LAST SHIPMENTS (Last Updated: 1 week ago)--Through HoleTO-220-3-3---65°C~150°C TJTube2006--Obsolete1 (Unlimited)---120V50W-8A30MHz--1Single50W--30MHz-PNP120V8A20 @ 4A 2V100μA-500mV @ 100mA, 1A120V-500mV120V5V40-----Non-RoHS CompliantContains Lead--------50W120V8A30MHzTO-220AB150°C-65°CPNP
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