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MJE15029G

ON Semiconductor MJE15029G

Part Number:
MJE15029G
Manufacturer:
ON Semiconductor
Ventron No:
2463282-MJE15029G
Description:
TRANS PNP 120V 8A TO220AB
ECAD Model:
Datasheet:
MJE15029G

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Specifications
ON Semiconductor MJE15029G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15029G.
  • Lifecycle Status
    ACTIVE (Last Updated: 23 hours ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -120V
  • Max Power Dissipation
    50W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -8A
  • Frequency
    30MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    50W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    30MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    120V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 2V
  • Current - Collector Cutoff (Max)
    100μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    120V
  • Transition Frequency
    30MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • Height
    9.28mm
  • Length
    10.28mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE15029G Overview
In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-8A).30MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.

MJE15029G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 30MHz


MJE15029G Applications
There are a lot of ON Semiconductor
MJE15029G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE15029G More Descriptions
Trans GP BJT PNP 120V 8A 50000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 120 V 8 A PNP Complementary Silicon Plastic Power Transistor TO-220AB
ON Semi MJE15029G PNP Bipolar Transistor, 8 A, 120 V, 3-Pin TO-220AB | ON Semiconductor MJE15029G
8.0 A, 120 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
10Ã×A 120V 50W 8A 20@4A2V 30MHz 500mV@1A100mA PNP -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Transistor, Pnp, -120V To-220; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:120V; Dc Collector Current:8A; Power Dissipation Pd:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Dc Current Gain Hfe:40Hfe Rohs Compliant: Yes |Onsemi MJE15029G.
Product Comparison
The three parts on the right have similar specifications to MJE15029G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Terminal Finish
    Additional Feature
    Terminal Position
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Mount
    Reach Compliance Code
    View Compare
  • MJE15029G
    MJE15029G
    ON Semiconductor
    ACTIVE (Last Updated: 23 hours ago)
    2 Weeks
    Tin
    Through Hole
    TO-220-3
    NO
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -120V
    50W
    260
    -8A
    30MHz
    40
    3
    1
    Single
    50W
    COLLECTOR
    AMPLIFIER
    30MHz
    PNP
    PNP
    120V
    8A
    20 @ 4A 2V
    100μA
    TO-220AB
    500mV @ 100mA, 1A
    120V
    30MHz
    500mV
    120V
    5V
    40
    9.28mm
    10.28mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE18002
    MJE18002
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    -
    SILICON
    -65°C~150°C TJ
    Tube
    -
    e0
    no
    Obsolete
    3 (168 Hours)
    3
    -
    -
    -
    -
    240
    -
    -
    30
    3
    1
    -
    -
    COLLECTOR
    SWITCHING
    -
    NPN
    NPN
    -
    -
    14 @ 200mA 5V
    100μA
    TO-220AB
    500mV @ 200mA, 1A
    -
    13MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SWITCHMODE™
    TIN LEAD
    LEADFORM OPTIONS ARE AVAILABLE
    SINGLE
    R-PSFM-T3
    COMMERCIAL
    SINGLE
    50W
    450V
    2A
    13MHz
    -
    -
    MJE15029G vs MJE18002
  • MJE15030
    MJE15030
    ON Semiconductor
    -
    -
    -
    -
    TO-220C
    -
    -
    -
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJE15029G vs MJE15030
  • MJE13009
    MJE13009
    ON Semiconductor
    OBSOLETE (Last Updated: 1 week ago)
    -
    -
    Through Hole
    TO-220-3
    -
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    400V
    2W
    240
    12A
    -
    30
    3
    1
    Single
    2W
    COLLECTOR
    SWITCHING
    4MHz
    NPN
    NPN
    3V
    12A
    8 @ 5A 5V
    -
    TO-220AB
    3V @ 3A, 12A
    400V
    4MHz
    1V
    700V
    9V
    8
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    Tin/Lead (Sn/Pb)
    LEADFORM OPTIONS ARE AVAILABLE
    -
    -
    Not Qualified
    -
    -
    -
    -
    -
    Through Hole
    not_compliant
    MJE15029G vs MJE13009
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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