ON Semiconductor MJD45H11G

Name: MJD45H11G
Brand: ON Semiconductor
SKU: 2463247-MJD45H11G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD45H11G

Manufacturer:: ON Semiconductor

Ventron No:: 2463247-MJD45H11G

Description:: TRANS PNP 80V 8A DPAK

ECAD Model:

Datasheet:: MJD45H11G

Specifications

ON Semiconductor MJD45H11G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD45H11G.

Lifecycle Status
ACTIVE (Last Updated: 19 hours ago)
Factory Lead Time
22 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-8A
Frequency
90MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD45H11
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
90MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
90MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
5V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Height
2.38mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD45H11G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.In this part, there is a transition frequency of 90MHz.The maximum collector current is 8A volts.

MJD45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 90MHz

MJD45H11G Applications
There are a lot of ON Semiconductor
MJD45H11G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD45H11G More Descriptions

ON Semi MJD45H11G PNP Bipolar Transistor, 8 A, 80 V, 3-Pin DPAK | ON Semiconductor MJD45H11G
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(2 Tab) DPAK Tube
8 A, 80 V PNP Power Bipolar Junction Transistor
80V 1.75W 40@4A,1V 8A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252-3
TRANSISTOR, PNP, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style:
Rf Transistor, Pnp, -80V, 90Mhz, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD45H11G.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5 / Reflow Temperature Max. °C = 260

Product Comparison

The three parts on the right have similar specifications to MJD45H11G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Halogen Free

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Terminal Finish

Reach Compliance Code

Qualification Status

Weight

Max Breakdown Voltage

View Compare
MJD45H11G

ON Semiconductor

ACTIVE (Last Updated: 19 hours ago)

22 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-55°C~150°C TJ

Tube

2002

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

-80V

1.75W

GULL WING

260

-8A

90MHz

40

MJD45H11

3

R-PSSO-G2

1

Single

1.75W

COLLECTOR

SWITCHING

Halogen Free

90MHz

PNP

PNP

80V

8A

40 @ 4A 1V

1μA

1V @ 400mA, 8A

80V

90MHz

1V

5V

5V

60

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
MJD45H11-1G

ON Semiconductor

ACTIVE (Last Updated: 15 hours ago)

8 Weeks

Tin

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-55°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-80V

1.75W

-

260

-8A

90MHz

40

MJD45H11

4

R-PSIP-T3

1

Single

1.75W

COLLECTOR

SWITCHING

Halogen Free

90MHz

PNP

PNP

80V

8A

40 @ 4A 1V

1μA

1V @ 400mA, 8A

80V

40MHz

1V

5V

5V

60

6.22mm

6.73mm

2.38mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

MJD45H11G vs MJD45H11-1G
MJD47

ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

3

SILICON

-65°C~150°C TJ

Tube

2009

e0

-

Obsolete

1 (Unlimited)

2

EAR99

Other Transistors

250V

1.56W

GULL WING

240

1A

10MHz

30

MJD47

3

R-PSSO-G2

1

Single

1.56W

COLLECTOR

SWITCHING

-

10MHz

NPN

NPN

250V

1A

30 @ 300mA 10V

200μA

1V @ 200mA, 1A

250V

10MHz

1V

350V

5V

30

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Surface Mount

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

-

-

MJD45H11G vs MJD47
MJD42CT4G

ON Semiconductor

ACTIVE (Last Updated: 10 hours ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2002

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

-100V

20W

GULL WING

260

-6A

3MHz

40

MJD42

3

R-PSSO-G2

1

Single

1.75W

COLLECTOR

SWITCHING

-

3MHz

PNP

PNP

100V

6A

15 @ 3A 4V

50μA

1.5V @ 600mA, 6A

100V

3MHz

1.5V

100V

5V

30

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

4.535924g

100V

MJD45H11G vs MJD42CT4G