ON Semiconductor MJD44H11T4
- Part Number:
- MJD44H11T4
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466918-MJD44H11T4
- Description:
- TRANS NPN 80V 8A DPAK
- Datasheet:
- MJD44H11T4
ON Semiconductor MJD44H11T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD44H11T4.
- Voltage - Collector Emitter Breakdown (Max):80V
- Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
- Transistor Type:NPN
- Supplier Device Package:DPAK-3
- Series:-
- Power - Max:1.75W
- Packaging:Original-Reel®
- Package / Case:TO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Frequency - Transition:85MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
- Current - Collector Cutoff (Max):1µA
- Current - Collector (Ic) (Max):8A
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor MJD44H11T4.
MJD44H11T4 More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 80 V, 20 W, 8 A, 60 Rohs Compliant: Yes
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD44H11 Series NPN/PNP 80 V 8 A Complementary Silicon Transistor - TO-252-3
80V 20W 40@4A,1V 8A NPN TO-252 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 8A 20000mW 3-Pin(2 Tab) DPAK T/R
Bipolar Transistors - BJT NPN Gen Pur Switch
Transistor NPN 80V 8A DPAK; Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC
Trans, Npn, 80V, 8A, 150Deg C, 20W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4
Transistor Polarity = NPN / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel
TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 8A; Hfe Min: 60; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD44H11 Series NPN/PNP 80 V 8 A Complementary Silicon Transistor - TO-252-3
80V 20W 40@4A,1V 8A NPN TO-252 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 8A 20000mW 3-Pin(2 Tab) DPAK T/R
Bipolar Transistors - BJT NPN Gen Pur Switch
Transistor NPN 80V 8A DPAK; Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC
Trans, Npn, 80V, 8A, 150Deg C, 20W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4
Transistor Polarity = NPN / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel
TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 8A; Hfe Min: 60; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power
The three parts on the right have similar specifications to MJD44H11T4.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationHalogen FreeGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountTerminal FinishTerminal FormReach Compliance CodeQualification StatusWeightMax Breakdown VoltageREACH SVHCView Compare
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MJD44H11T480V1V @ 400mA, 8ANPNDPAK-3-1.75WOriginal-Reel®TO-252-3, DPak (2 Leads Tab), SC-63-55°C ~ 150°C (TJ)Surface Mount85MHz40 @ 4A, 1V1µA8A--------------------------------------------------------------
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--------------ACTIVE (Last Updated: 15 hours ago)8 WeeksTinThrough HoleTO-251-3 Short Leads, IPak, TO-251AANO4SILICON-55°C~150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Other Transistors-80V1.75W260-8A90MHz40MJD45H114R-PSIP-T31Single1.75WCOLLECTORSWITCHINGHalogen Free90MHzPNPPNP80V8A40 @ 4A 1V1μA1V @ 400mA, 8A80V40MHz1V5V5V606.22mm6.73mm2.38mmNoROHS3 CompliantLead Free--------
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-----------------Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON-65°C~150°C TJTube2009e0-Obsolete1 (Unlimited)2EAR99Other Transistors250V1.56W2401A10MHz30MJD473R-PSSO-G21Single1.56WCOLLECTORSWITCHING-10MHzNPNNPN250V1A30 @ 300mA 10V200μA1V @ 200mA, 1A250V10MHz1V350V5V30----Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)GULL WINGnot_compliantNot Qualified---
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--------------ACTIVE (Last Updated: 10 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)2EAR99Other Transistors-100V20W260-6A3MHz40MJD423R-PSSO-G21Single1.75WCOLLECTORSWITCHING-3MHzPNPPNP100V6A15 @ 3A 4V50μA1.5V @ 600mA, 6A100V3MHz1.5V100V5V302.38mm6.73mm6.22mmNoROHS3 CompliantLead Free--GULL WING--4.535924g100VNo SVHC
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