MJD44H11T4

ON Semiconductor MJD44H11T4

Part Number:
MJD44H11T4
Manufacturer:
ON Semiconductor
Ventron No:
2466918-MJD44H11T4
Description:
TRANS NPN 80V 8A DPAK
ECAD Model:
Datasheet:
MJD44H11T4

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Specifications
ON Semiconductor MJD44H11T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD44H11T4.
  • Voltage - Collector Emitter Breakdown (Max):
    80V
  • Vce Saturation (Max) @ Ib, Ic:
    1V @ 400mA, 8A
  • Transistor Type:
    NPN
  • Supplier Device Package:
    DPAK-3
  • Series:
    -
  • Power - Max:
    1.75W
  • Packaging:
    Original-Reel®
  • Package / Case:
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Frequency - Transition:
    85MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce:
    40 @ 4A, 1V
  • Current - Collector Cutoff (Max):
    1µA
  • Current - Collector (Ic) (Max):
    8A
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor MJD44H11T4.
MJD44H11T4 More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 80 V, 20 W, 8 A, 60 Rohs Compliant: Yes
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD44H11 Series NPN/PNP 80 V 8 A Complementary Silicon Transistor - TO-252-3
80V 20W 40@4A,1V 8A NPN TO-252 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 8A 20000mW 3-Pin(2 Tab) DPAK T/R
Bipolar Transistors - BJT NPN Gen Pur Switch
Transistor NPN 80V 8A DPAK; Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC
Trans, Npn, 80V, 8A, 150Deg C, 20W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4
Transistor Polarity = NPN / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel
TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 8A; Hfe Min: 60; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power
Product Comparison
The three parts on the right have similar specifications to MJD44H11T4.
  • Image
    Part Number
    Manufacturer
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Terminal Form
    Reach Compliance Code
    Qualification Status
    Weight
    Max Breakdown Voltage
    REACH SVHC
    View Compare
  • MJD44H11T4
    MJD44H11T4
    80V
    1V @ 400mA, 8A
    NPN
    DPAK-3
    -
    1.75W
    Original-Reel®
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C ~ 150°C (TJ)
    Surface Mount
    85MHz
    40 @ 4A, 1V
    1µA
    8A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD45H11-1G
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 15 hours ago)
    8 Weeks
    Tin
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    4
    SILICON
    -55°C~150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -80V
    1.75W
    260
    -8A
    90MHz
    40
    MJD45H11
    4
    R-PSIP-T3
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    Halogen Free
    90MHz
    PNP
    PNP
    80V
    8A
    40 @ 4A 1V
    1μA
    1V @ 400mA, 8A
    80V
    40MHz
    1V
    5V
    5V
    60
    6.22mm
    6.73mm
    2.38mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD47
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2009
    e0
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    250V
    1.56W
    240
    1A
    10MHz
    30
    MJD47
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    SWITCHING
    -
    10MHz
    NPN
    NPN
    250V
    1A
    30 @ 300mA 10V
    200μA
    1V @ 200mA, 1A
    250V
    10MHz
    1V
    350V
    5V
    30
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    Tin/Lead (Sn/Pb)
    GULL WING
    not_compliant
    Not Qualified
    -
    -
    -
  • MJD42CT4G
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 10 hours ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -100V
    20W
    260
    -6A
    3MHz
    40
    MJD42
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    -
    3MHz
    PNP
    PNP
    100V
    6A
    15 @ 3A 4V
    50μA
    1.5V @ 600mA, 6A
    100V
    3MHz
    1.5V
    100V
    5V
    30
    2.38mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    GULL WING
    -
    -
    4.535924g
    100V
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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