STMicroelectronics MJD44H11T4

Name: MJD44H11T4
Brand: STMicroelectronics
SKU: 2464515-MJD44H11T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD44H11T4

Manufacturer:: STMicroelectronics

Ventron No:: 2464515-MJD44H11T4

Description:: TRANS NPN 80V 8A DPAK

ECAD Model:

Datasheet:: MJD44H11T4

Specifications

STMicroelectronics MJD44H11T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD44H11T4.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
20W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Transition Frequency
85MHz
Frequency - Transition
85MHz
RoHS Status
Non-RoHS Compliant

Description

MJD44H11T4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 2A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.A transition frequency of 85MHz is present in the part.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.

MJD44H11T4 Features
the DC current gain for this device is 60 @ 2A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 85MHz

MJD44H11T4 Applications
There are a lot of Rochester Electronics, LLC
MJD44H11T4 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD44H11T4 More Descriptions

Bipolar (Bjt) Single Transistor, Npn, 80 V, 20 W, 8 A, 60 Rohs Compliant: Yes
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD44H11 Series NPN/PNP 80 V 8 A Complementary Silicon Transistor - TO-252-3
80V 20W 40@4A,1V 8A NPN TO-252 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 8A 20000mW 3-Pin(2 Tab) DPAK T/R
Bipolar Transistors - BJT NPN Gen Pur Switch
Transistor NPN 80V 8A DPAK; Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC
Trans, Npn, 80V, 8A, 150Deg C, 20W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4
Transistor Polarity = NPN / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel
TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 8A; Hfe Min: 60; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power

Product Comparison

The three parts on the right have similar specifications to MJD44H11T4.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

RoHS Status

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Number of Pins

Weight

Published

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Contact Plating

Max Breakdown Voltage

View Compare
MJD44H11T4

STMicroelectronics

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e0

yes

Obsolete

1 (Unlimited)

2

TIN LEAD

SINGLE

GULL WING

240

unknown

30

3

R-PSSO-G2

COMMERCIAL

1

SINGLE

COLLECTOR

20W

SWITCHING

NPN

NPN

60 @ 2A 1V

1μA

1V @ 400mA, 8A

80V

8A

85MHz

85MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD47T4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

1V @ 200mA, 1A

NPN

D-Pak

-

15W

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

150°C (TJ)

Surface Mount

10MHz

30 @ 300mA, 10V

100µA

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD44H11T4 vs MJD47T4
MJD42CG

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-65°C~150°C TJ

Tube

e3

yes

Active

1 (Unlimited)

2

Tin (Sn)

-

GULL WING

260

-

40

3

R-PSSO-G2

-

1

-

COLLECTOR

-

SWITCHING

PNP

PNP

15 @ 3A 4V

50μA

1.5V @ 600mA, 6A

-

-

3MHz

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

2 Weeks

3

4.535924g

2006

SMD/SMT

EAR99

Other Transistors

-100V

1.75W

-6A

3MHz

MJD42

Single

1.75W

3MHz

100V

6A

100V

1.5V

100V

5V

15

2.3876mm

6.7056mm

6.223mm

No SVHC

No

Lead Free

-

-

MJD44H11T4 vs MJD42CG
MJD42CT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

2

-

-

GULL WING

260

-

40

3

R-PSSO-G2

-

1

-

COLLECTOR

-

SWITCHING

PNP

PNP

15 @ 3A 4V

50μA

1.5V @ 600mA, 6A

-

-

3MHz

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 10 hours ago)

8 Weeks

3

4.535924g

2002

-

EAR99

Other Transistors

-100V

20W

-6A

3MHz

MJD42

Single

1.75W

3MHz

100V

6A

100V

1.5V

100V

5V

30

2.38mm

6.73mm

6.22mm

No SVHC

No

Lead Free

Tin

100V

MJD44H11T4 vs MJD42CT4G