ON Semiconductor MJD44H11-1G
- Part Number:
- MJD44H11-1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463278-MJD44H11-1G
- Description:
- TRANS NPN 80V 8A IPAK
- ECAD Model:
-
- Datasheet:
- MJD44H11-1G
ON Semiconductor MJD44H11-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD44H11-1G.
- Lifecycle StatusACTIVE (Last Updated: 13 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1.75W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Frequency85MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD44H11
- Pin Count4
- JESD-30 CodeR-PSIP-T3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product85MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)5V
- Emitter Base Voltage (VEBO)5V
- hFE Min60
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD44H11-1G Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.As a result, the part has a transition frequency of 50MHz.In extreme cases, the collector current can be as low as 8A volts.
MJD44H11-1G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
MJD44H11-1G Applications
There are a lot of ON Semiconductor
MJD44H11-1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.As a result, the part has a transition frequency of 50MHz.In extreme cases, the collector current can be as low as 8A volts.
MJD44H11-1G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
MJD44H11-1G Applications
There are a lot of ON Semiconductor
MJD44H11-1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD44H11-1G More Descriptions
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
8 A, 80 V NPN Bipolar Power Transistor
Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3 Tab) IPAK Tube
MJD44H11 Series 80 V 8 A 1.75 W NPN Complementary Power Transistor - IPAK-3
80V 1.75W 40@4A,1V 8A NPN TO-251(IPAK) Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 80V, 8A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 85MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor C
...for general purpose power and switching such as output or driver stag applications such as switching regulators converters and power amplifiers.
8 A, 80 V NPN Bipolar Power Transistor
Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3 Tab) IPAK Tube
MJD44H11 Series 80 V 8 A 1.75 W NPN Complementary Power Transistor - IPAK-3
80V 1.75W 40@4A,1V 8A NPN TO-251(IPAK) Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 80V, 8A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 85MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor C
...for general purpose power and switching such as output or driver stag applications such as switching regulators converters and power amplifiers.
The three parts on the right have similar specifications to MJD44H11-1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationHalogen FreeGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminal FormMax Breakdown VoltageWeightHeightLengthWidthREACH SVHCView Compare
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MJD44H11-1GACTIVE (Last Updated: 13 hours ago)8 WeeksTinThrough HoleTO-251-3 Short Leads, IPak, TO-251AANO4SILICON-55°C~150°C TJTube2001e3yesActive1 (Unlimited)3EAR99Other Transistors80V1.75W2608A85MHz40MJD44H114R-PSIP-T31Single1.75WCOLLECTORSWITCHINGHalogen Free85MHzNPNNPN80V8A40 @ 4A 1V1μA1V @ 400mA, 8A80V50MHz1V5V5V60NoROHS3 CompliantLead Free--------- -
ACTIVE (Last Updated: 5 days ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99Other Transistors80V1.75W2608A85MHz40MJD44H113R-PSSO-G21Single1.75WCOLLECTORSWITCHINGHalogen Free85MHzNPNNPN80V8A40 @ 4A 1V1μA1V @ 400mA, 8A80V85MHz1V5V5V60NoROHS3 CompliantLead FreeTin (Sn)GULL WING------
-
ACTIVE (Last Updated: 18 hours ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.75W2606A3MHz40MJD413R-PSSO-G21Single1.75WCOLLECTORSWITCHING-3MHzNPNNPN100V6A15 @ 3A 4V50μA1.5V @ 600mA, 6A100V3MHz1.5V100V5V30NoROHS3 CompliantLead FreeTin (Sn)GULL WING100V-----
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ACTIVE (Last Updated: 10 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)2EAR99Other Transistors-100V20W260-6A3MHz40MJD423R-PSSO-G21Single1.75WCOLLECTORSWITCHING-3MHzPNPPNP100V6A15 @ 3A 4V50μA1.5V @ 600mA, 6A100V3MHz1.5V100V5V30NoROHS3 CompliantLead Free-GULL WING100V4.535924g2.38mm6.73mm6.22mmNo SVHC
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