ON Semiconductor MJD41CT4G

Name: MJD41CT4G
Brand: ON Semiconductor
SKU: 2845169-MJD41CT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD41CT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2845169-MJD41CT4G

Description:: TRANS NPN 100V 6A DPAK

ECAD Model:

Datasheet:: MJD41CT4G

Specifications

ON Semiconductor MJD41CT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD41CT4G.

Lifecycle Status
ACTIVE (Last Updated: 8 hours ago)
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
6A
Frequency
3MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD41
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
2.38mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD41CT4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 6A volts at its maximum.

MJD41CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

MJD41CT4G Applications
There are a lot of ON Semiconductor
MJD41CT4G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD41CT4G More Descriptions

ON Semi MJD41CT4G NPN Bipolar Transistor, 6 A, 100 V, 3-Pin DPAK | ON Semiconductor MJD41CT4G
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
100V 1.75W 15@3A,4V 6A NPN TO-252 Bipolar Transistors - BJT ROHS
MJD Series 100 V 6 A NPN Complementary Power Transistor - TO-252-3
Trans GP BJT NPN 100V 6A 1750mW 3-Pin(2 Tab) DPAK T/R / TRANS NPN 100V 6A DPAK
TRANS, BIPOL, NPN, 100V, TO252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 6A; DC Current Gain hFE: 15hFE; Transistor C

Product Comparison

The three parts on the right have similar specifications to MJD41CT4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Halogen Free

View Compare
MJD41CT4G

ON Semiconductor

ACTIVE (Last Updated: 8 hours ago)

19 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

100V

1.75W

GULL WING

260

6A

3MHz

40

MJD41

3

R-PSSO-G2

1

Single

1.75W

COLLECTOR

SWITCHING

3MHz

NPN

NPN

100V

6A

15 @ 3A 4V

50μA

1.5V @ 600mA, 6A

100V

3MHz

1.5V

100V

100V

5V

30

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD47T4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

1V @ 200mA, 1A

NPN

D-Pak

-

15W

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

150°C (TJ)

Surface Mount

10MHz

30 @ 300mA, 10V

100µA

1A

-

MJD41CT4G vs MJD47T4
MJD45H11-1G

ON Semiconductor

ACTIVE (Last Updated: 15 hours ago)

8 Weeks

Tin

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-55°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-80V

1.75W

-

260

-8A

90MHz

40

MJD45H11

4

R-PSIP-T3

1

Single

1.75W

COLLECTOR

SWITCHING

90MHz

PNP

PNP

80V

8A

40 @ 4A 1V

1μA

1V @ 400mA, 8A

80V

40MHz

1V

-

5V

5V

60

6.22mm

6.73mm

2.38mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Halogen Free

MJD41CT4G vs MJD45H11-1G
MJD45H11RLG

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

-80V

20W

GULL WING

260

-8A

90MHz

40

MJD45H11

3

R-PSSO-G2

1

Single

1.75W

COLLECTOR

SWITCHING

90MHz

PNP

PNP

80V

8A

40 @ 4A 1V

1μA

1V @ 400mA, 8A

80V

90MHz

1V

80V

5V

5V

60

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Halogen Free

MJD41CT4G vs MJD45H11RLG