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MJD2955T4G

ON Semiconductor MJD2955T4G

Part Number:
MJD2955T4G
Manufacturer:
ON Semiconductor
Ventron No:
3585236-MJD2955T4G
Description:
TRANS PNP 60V 10A DPAK
ECAD Model:
Datasheet:
MJD2955T4G

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Specifications
ON Semiconductor MJD2955T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD2955T4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    22 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    1.75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -10A
  • Frequency
    2MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD2955
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    20W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    2MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 4V
  • Current - Collector Cutoff (Max)
    50μA
  • Vce Saturation (Max) @ Ib, Ic
    8V @ 3.3A, 10A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    2MHz
  • Collector Emitter Saturation Voltage
    1.1V
  • Max Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    70V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    20
  • Max Junction Temperature (Tj)
    150°C
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD2955T4G Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 10A volts is possible.

MJD2955T4G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz


MJD2955T4G Applications
There are a lot of ON Semiconductor
MJD2955T4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD2955T4G More Descriptions
ON Semi MJD2955T4G PNP Bipolar Transistor, 10 A, 60 V, 3-Pin DPAK | ON Semiconductor MJD2955T4G
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT PNP 60V 10A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, BIPOL, PNP, -60V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:2MHz; Power
Bipolar Transistor, Dual N/P Channel 60V, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MJD2955T4G.
Product Comparison
The three parts on the right have similar specifications to MJD2955T4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Polarity
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Terminal Finish
    Reach Compliance Code
    View Compare
  • MJD2955T4G
    MJD2955T4G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    22 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -60V
    1.75W
    GULL WING
    260
    -10A
    2MHz
    40
    MJD2955
    3
    R-PSSO-G2
    1
    Single
    20W
    COLLECTOR
    AMPLIFIER
    2MHz
    PNP
    PNP
    60V
    10A
    20 @ 4A 4V
    50μA
    8V @ 3.3A, 10A
    60V
    2MHz
    1.1V
    60V
    70V
    5V
    20
    150°C
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD210RLG
    MJD210RLG
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    -
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -25V
    12.5W
    GULL WING
    260
    -5A
    65MHz
    40
    MJD210
    3
    R-PSSO-G2
    1
    Single
    1.4W
    COLLECTOR
    AMPLIFIER
    65MHz
    -
    PNP
    25V
    5A
    45 @ 2A 1V
    100nA ICBO
    1.8V @ 1A, 5A
    40V
    65MHz
    1.8V
    25V
    40V
    8V
    70
    -
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    PNP, NPN
    -
    -
    -
    -
    -
    -
    -
    MJD2955T4G vs MJD210RLG
  • MJD29CTF
    MJD29CTF
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -
    150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    15 @ 1A 4V
    50μA
    700mV @ 125mA, 1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    1.56W
    100V
    1A
    3MHz
    -
    -
    MJD2955T4G vs MJD29CTF
  • MJD253-001
    MJD253-001
    ON Semiconductor
    OBSOLETE (Last Updated: 1 week ago)
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    4
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2007
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -100V
    1.4W
    -
    -
    -4A
    -
    -
    MJD253
    4
    R-PSIP-T3
    1
    Single
    -
    COLLECTOR
    AMPLIFIER
    40MHz
    PNP
    PNP
    600mV
    4A
    40 @ 200mA 1V
    100nA ICBO
    600mV @ 100mA, 1A
    100V
    40MHz
    600mV
    -
    100V
    7V
    40
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    4A
    -
    Tin/Lead (Sn/Pb)
    not_compliant
    MJD2955T4G vs MJD253-001
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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