ON Semiconductor MJD200T4G
- Part Number:
- MJD200T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463964-MJD200T4G
- Description:
- TRANS NPN 25V 5A DPAK
- Datasheet:
- MJD200T4G
ON Semiconductor MJD200T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD200T4G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time5 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation12.5W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Frequency65MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD200
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product65MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency65MHz
- Collector Emitter Saturation Voltage1.8V
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)8V
- hFE Min70
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD200T4G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJD200T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4G Applications
There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJD200T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4G Applications
There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD200T4G More Descriptions
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
5 A, 25 V NPN Bipolar Power Transistor
Trans GP BJT NPN 25V 10A 1400mW 3-Pin(2 Tab) DPAK T/R
MJD Series 25 V Tab Mount NPN Complementary Plastic Power Transistor TO-252-3
Trans GP BJT NPN 25V 5A 3-Pin(2 Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt:
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, BIPOL, NPN, 25V, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:65MHz; Power
Bipolar Transistor, Npn, 25V, D-Pak, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Continuous Collector Current:5A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MJD200T4G.
5 A, 25 V NPN Bipolar Power Transistor
Trans GP BJT NPN 25V 10A 1400mW 3-Pin(2 Tab) DPAK T/R
MJD Series 25 V Tab Mount NPN Complementary Plastic Power Transistor TO-252-3
Trans GP BJT NPN 25V 5A 3-Pin(2 Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt:
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, BIPOL, NPN, 25V, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:65MHz; Power
Bipolar Transistor, Npn, 25V, D-Pak, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Continuous Collector Current:5A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MJD200T4G.
The three parts on the right have similar specifications to MJD200T4G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Terminal FinishTerminal PositionReach Compliance CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountView Compare
-
MJD200T4GACTIVE (Last Updated: 5 days ago)5 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99Other Transistors25V12.5WGULL WING2605A65MHz40MJD2003R-PSSO-G21Single1.4WCOLLECTORAMPLIFIER65MHzNPNNPN25V5A45 @ 2A 1V100nA ICBO1.8V @ 1A, 5A25V65MHz1.8V25V40V8V70No SVHCNoROHS3 CompliantLead Free-------------------------
-
----------------------------------------------------60V5V @ 3.3A, 10APNPD-Pak-20WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount2MHz20 @ 4A, 4V50µA10A----------
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES-SILICON-65°C~150°C TJTape & Reel (TR)-e0noObsolete1 (Unlimited)2----GULL WING240--30-3R-PSSO-G21--COLLECTORAMPLIFIER-PNPPNP--45 @ 2A 1V100nA ICBO1.8V @ 1A, 5A-65MHz-------Non-RoHS Compliant---------------TIN LEADSINGLEunknownCOMMERCIALSINGLE1.4W25V5A65MHz-
-
OBSOLETE (Last Updated: 8 hours ago)--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON-55°C~150°C TJTube2006e0noObsolete1 (Unlimited)2EAR99Other Transistors-60V1.75WGULL WING240-10A2MHz30MJD29553R-PSSO-G21Single1.75WCOLLECTORAMPLIFIER2MHzPNPPNP60V10A20 @ 4A 4V50μA8V @ 3.3A, 10A60V2MHz1.1V-70V5V20--Non-RoHS CompliantContains Lead--------------Tin/Lead (Sn/Pb)-not_compliantNot Qualified-----Surface Mount
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 February 2024
LD7575PS Manufacturer, Advantages and Disadvantages and Other Details
Ⅰ. What is LD7575PS?Ⅱ. Pins and functions of LD7575PSⅢ. Manufacturer of LD7575PSⅣ. How does LD7575PS achieve stable output voltage?Ⅴ. Block diagram of LD7575PSⅥ. What is the performance of... -
27 February 2024
BQ32000DR Structure, Technical Parameters, Layout Guidelines and Applications
Ⅰ. Overview of BQ32000DRⅡ. Structure of BQ32000DRⅢ. Simplified schematic of BQ32000DRⅣ. Technical parameters of BQ32000DRⅤ. Layout guidelines for BQ32000DRⅥ. Where to use BQ32000DR?Ⅶ. How does the backup power... -
28 February 2024
An In-Depth Look at the TXS0108ERGYR: A Solution for Logic Level Conversion
Ⅰ. TXS0108ERGYR overviewⅡ. Specifications of TXS0108ERGYRⅢ. Recommended operating conditions of TXS0108ERGYRⅣ. Advantages of TXS0108ERGYRⅤ. Functional block diagram of TXSO108ERGYRⅥ. Application areas of TXS0108ERGYRⅦ. Wiring and circuit design of... -
28 February 2024
MAX232IDR Characteristics, Specifications, Application Fields and Working Principle
Ⅰ. Description of MAX232IDRⅡ. What are the characteristics of MAX232IDR?Ⅲ. Specifications of MAX232IDRⅣ. Parameter measurement information of MAX232IDRⅤ. Application fields of MAX232IDRⅥ. Application examples of MAX232IDRⅦ. How does...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.