ON Semiconductor MJD200T4
- Part Number:
- MJD200T4
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466914-MJD200T4
- Description:
- TRANS NPN 25V 5A DPAK
- Datasheet:
- MJD200T4
ON Semiconductor MJD200T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD200T4.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max12.5W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)5A
- Transition Frequency65MHz
- Frequency - Transition65MHz
- RoHS StatusNon-RoHS Compliant
MJD200T4 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 65MHz in the part.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MJD200T4 Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 300mV @ 50mA, 500mA
a transition frequency of 65MHz
MJD200T4 Applications
There are a lot of Rochester Electronics, LLC
MJD200T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 65MHz in the part.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MJD200T4 Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 300mV @ 50mA, 500mA
a transition frequency of 65MHz
MJD200T4 Applications
There are a lot of Rochester Electronics, LLC
MJD200T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD200T4 More Descriptions
Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 45 @ 2A 1V 5A 1.4W 65MHz
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
5 A, 25 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
5 A, 25 V NPN Bipolar Power Transistor
The three parts on the right have similar specifications to MJD200T4.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberPolarityElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MJD200T4Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-65°C~150°C TJTape & Reel (TR)e0yesObsolete1 (Unlimited)2TIN LEADSINGLEGULL WING240unknown303R-PSSO-G2COMMERCIAL1SINGLECOLLECTOR12.5WAMPLIFIERNPNNPN45 @ 2A 1V300mV @ 50mA, 500mA25V5A65MHz65MHzNon-RoHS Compliant----------------------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-65°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)2--GULL WING260-403R-PSSO-G2-1-COLLECTOR-AMPLIFIER-PNP45 @ 2A 1V1.8V @ 1A, 5A--65MHz-ROHS3 CompliantACTIVE (Last Updated: 4 days ago)8 WeeksTin32005EAR99Other Transistors-25V12.5W-5A65MHzMJD210PNP, NPNSingle1.4W65MHz25V5A100nA ICBO40V1.8V25V40V8V702.38mm6.73mm6.22mmNo SVHCNoLead Free--------------
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-----------------------------------------------------------------60V5V @ 3.3A, 10APNPD-Pak-20WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount2MHz20 @ 4A, 4V50µA10A
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-65°C~150°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)2TIN LEADSINGLEGULL WING240unknown303R-PSSO-G2COMMERCIAL1SINGLECOLLECTOR1.4WAMPLIFIERPNPPNP45 @ 2A 1V1.8V @ 1A, 5A25V5A65MHz65MHzNon-RoHS Compliant------------------100nA ICBO--------------------------
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