MJD200T4

ON Semiconductor MJD200T4

Part Number:
MJD200T4
Manufacturer:
ON Semiconductor
Ventron No:
2466914-MJD200T4
Description:
TRANS NPN 25V 5A DPAK
ECAD Model:
Datasheet:
MJD200T4

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Specifications
ON Semiconductor MJD200T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD200T4.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    12.5W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    45 @ 2A 1V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Current - Collector (Ic) (Max)
    5A
  • Transition Frequency
    65MHz
  • Frequency - Transition
    65MHz
  • RoHS Status
    Non-RoHS Compliant
Description
MJD200T4 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 65MHz in the part.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MJD200T4 Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 300mV @ 50mA, 500mA
a transition frequency of 65MHz


MJD200T4 Applications
There are a lot of Rochester Electronics, LLC
MJD200T4 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD200T4 More Descriptions
Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 45 @ 2A 1V 5A 1.4W 65MHz
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
5 A, 25 V NPN Bipolar Power Transistor
Product Comparison
The three parts on the right have similar specifications to MJD200T4.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Number of Pins
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Polarity
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • MJD200T4
    MJD200T4
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    e0
    yes
    Obsolete
    1 (Unlimited)
    2
    TIN LEAD
    SINGLE
    GULL WING
    240
    unknown
    30
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE
    COLLECTOR
    12.5W
    AMPLIFIER
    NPN
    NPN
    45 @ 2A 1V
    300mV @ 50mA, 500mA
    25V
    5A
    65MHz
    65MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD210RLG
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    -
    GULL WING
    260
    -
    40
    3
    R-PSSO-G2
    -
    1
    -
    COLLECTOR
    -
    AMPLIFIER
    -
    PNP
    45 @ 2A 1V
    1.8V @ 1A, 5A
    -
    -
    65MHz
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    3
    2005
    EAR99
    Other Transistors
    -25V
    12.5W
    -5A
    65MHz
    MJD210
    PNP, NPN
    Single
    1.4W
    65MHz
    25V
    5A
    100nA ICBO
    40V
    1.8V
    25V
    40V
    8V
    70
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD2955T4
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    5V @ 3.3A, 10A
    PNP
    D-Pak
    -
    20W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    2MHz
    20 @ 4A, 4V
    50µA
    10A
  • MJD210RL
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    e0
    no
    Obsolete
    1 (Unlimited)
    2
    TIN LEAD
    SINGLE
    GULL WING
    240
    unknown
    30
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE
    COLLECTOR
    1.4W
    AMPLIFIER
    PNP
    PNP
    45 @ 2A 1V
    1.8V @ 1A, 5A
    25V
    5A
    65MHz
    65MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100nA ICBO
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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