ON Semiconductor MJ802G
- Part Number:
- MJ802G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845201-MJ802G
- Description:
- TRANS NPN 90V 30A TO3
- Datasheet:
- MJ802G
ON Semiconductor MJ802G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ802G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC90V
- Max Power Dissipation200W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating30A
- Frequency2MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJ802
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product2MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)90V
- Max Collector Current30A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 7.5A 2V
- Current - Collector Cutoff (Max)1mA ICBO
- Vce Saturation (Max) @ Ib, Ic800mV @ 750mA, 7.5A
- Collector Emitter Breakdown Voltage90V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage800mV
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)4V
- hFE Min25
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ802G More Descriptions
Transistor, Bipolar,Si,NPN,High Power,VCEO 100VDC,IC 30A,PD 200W,VCBO 100VDC
30 A, 90 V NPN Bipolar Power Transistor
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 90 V 30 A Screw Mount High Power NPN Silicon Transistor - TO-204AA
BIPOLAR Transistor, NPN, 90V TO-204; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V;
Transistor, Bipol, Npn, 90V; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:90V; Transition Frequency Ft:2Mhz; Power Dissipation Pd:200W; Dc Collector Current:30A; Dc Current Gain Hfe:25Hfe; Transistor Case Style:To-204;rohs Compliant: Yes |Onsemi MJ802G
30 A, 90 V NPN Bipolar Power Transistor
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 90 V 30 A Screw Mount High Power NPN Silicon Transistor - TO-204AA
BIPOLAR Transistor, NPN, 90V TO-204; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V;
Transistor, Bipol, Npn, 90V; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:90V; Transition Frequency Ft:2Mhz; Power Dissipation Pd:200W; Dc Collector Current:30A; Dc Current Gain Hfe:25Hfe; Transistor Case Style:To-204;rohs Compliant: Yes |Onsemi MJ802G
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