LP0701N3-G

Microchip Technology LP0701N3-G

Part Number:
LP0701N3-G
Manufacturer:
Microchip Technology
Ventron No:
3554215-LP0701N3-G
Description:
MOSFET P-CH 16.5V 0.5A TO92-3
ECAD Model:
Datasheet:
LP0701N3-G

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Specifications
Microchip Technology LP0701N3-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology LP0701N3-G.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1W
  • Turn On Delay Time
    20 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5 Ω @ 300mA, 5V
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    250pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    500mA Tj
  • Rise Time
    20ns
  • Drain to Source Voltage (Vdss)
    16.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    2V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    500mA
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    0.5A
  • Drain to Source Breakdown Voltage
    -16.5V
  • Feedback Cap-Max (Crss)
    60 pF
  • Height
    5.33mm
  • Length
    5.21mm
  • Width
    4.19mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
LP0701N3-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain-source breakdown voltage is -16.5V and VGS=-16.5V, so the drain-source breakdown voltage is -16.5V in this case.A device can conduct a maximum continuous current of [0.5A] according to its drain current.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 16.5V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2V 5V).

LP0701N3-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of -16.5V voltage
the turn-off delay time is 30 ns
a 16.5V drain to source voltage (Vdss)


LP0701N3-G Applications
There are a lot of Microchip Technology
LP0701N3-G applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
LP0701N3-G More Descriptions
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -16.5V, 1.5 Ohm3 TO-92 BAG | Microchip Technology Inc. LP0701N3-G
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:700Mv Rohs Compliant: Yes |Microchip LP0701N3-G
Small Signal Field-Effect Transistor, 0.5A I(D), 16.5V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 16.5 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 10 / Fall Time ns = 30 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-92 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bag / Power Dissipation (Pd) W = 1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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