Microchip Technology LP0701N3-G
- Part Number:
- LP0701N3-G
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3554215-LP0701N3-G
- Description:
- MOSFET P-CH 16.5V 0.5A TO92-3
- Datasheet:
- LP0701N3-G
Microchip Technology LP0701N3-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology LP0701N3-G.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Turn On Delay Time20 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.5 Ω @ 300mA, 5V
- Vgs(th) (Max) @ Id1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 15V
- Current - Continuous Drain (Id) @ 25°C500mA Tj
- Rise Time20ns
- Drain to Source Voltage (Vdss)16.5V
- Drive Voltage (Max Rds On,Min Rds On)2V 5V
- Vgs (Max)±10V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)500mA
- Gate to Source Voltage (Vgs)10V
- Drain Current-Max (Abs) (ID)0.5A
- Drain to Source Breakdown Voltage-16.5V
- Feedback Cap-Max (Crss)60 pF
- Height5.33mm
- Length5.21mm
- Width4.19mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
LP0701N3-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain-source breakdown voltage is -16.5V and VGS=-16.5V, so the drain-source breakdown voltage is -16.5V in this case.A device can conduct a maximum continuous current of [0.5A] according to its drain current.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 16.5V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2V 5V).
LP0701N3-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of -16.5V voltage
the turn-off delay time is 30 ns
a 16.5V drain to source voltage (Vdss)
LP0701N3-G Applications
There are a lot of Microchip Technology
LP0701N3-G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain-source breakdown voltage is -16.5V and VGS=-16.5V, so the drain-source breakdown voltage is -16.5V in this case.A device can conduct a maximum continuous current of [0.5A] according to its drain current.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 16.5V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2V 5V).
LP0701N3-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of -16.5V voltage
the turn-off delay time is 30 ns
a 16.5V drain to source voltage (Vdss)
LP0701N3-G Applications
There are a lot of Microchip Technology
LP0701N3-G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
LP0701N3-G More Descriptions
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -16.5V, 1.5 Ohm3 TO-92 BAG | Microchip Technology Inc. LP0701N3-G
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:700Mv Rohs Compliant: Yes |Microchip LP0701N3-G
Small Signal Field-Effect Transistor, 0.5A I(D), 16.5V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 16.5 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 10 / Fall Time ns = 30 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-92 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bag / Power Dissipation (Pd) W = 1
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -16.5V, 1.5 Ohm3 TO-92 BAG | Microchip Technology Inc. LP0701N3-G
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:700Mv Rohs Compliant: Yes |Microchip LP0701N3-G
Small Signal Field-Effect Transistor, 0.5A I(D), 16.5V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 16.5 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 10 / Fall Time ns = 30 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-92 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bag / Power Dissipation (Pd) W = 1
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