STMicroelectronics LET9060C

Name: LET9060C
Brand: STMicroelectronics
SKU: 3585841-LET9060C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: LET9060C

Manufacturer:: STMicroelectronics

Ventron No:: 3585841-LET9060C

Description:: MOSFET N-CH 80V 12A M-243

ECAD Model:

Datasheet:: LET9060C

Specifications

STMicroelectronics LET9060C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics LET9060C.

Mount
Screw, Surface Mount
Package / Case
M243
Number of Pins
3
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Max Power Dissipation
130W
Terminal Position
DUAL
Terminal Form
FLAT
Current Rating
12A
Frequency
945MHz
Base Part Number
LET9060
Pin Count
2
JESD-30 Code
R-PDFM-F2
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
400mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
80V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
12A
Gate to Source Voltage (Vgs)
15V
Gain
18dB
Drain Current-Max (Abs) (ID)
7A
Power - Output
75W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

LET9060C Description
A lateral field-effect RF power MOSFET with a common source N-channel and enhancement mode is called the LET9060C. It is intended for industrial, commercial, and high gain applications. At frequencies up to 1 GHz, it runs in common source mode at 28 V. The first genuine SMD plastic RF power package, PowerSO-10RF, houses ST's latest LDMOS technology, which has the exceptional gain, linearity, and reliability of LET9060C. The LET9060C is the perfect option for base station applications because to its outstanding linearity performance. The PowerSO-10 plastic package, which aims to provide excellent reliability, is the first high power SMD package to receive ST JEDEC approval. It has good RF capabilities and is simple to assemble. It has been specifically tailored for RF demands.

LET9060C Features
outstanding thermal stability
standardized source configuration
POUT= 60 W with a gain of 17.2 dB at 960 MHz and 28 V.
updated RF plastic packaging

LET9060C Applications
Switching applications

LET9060C More Descriptions

LET9060C Series 945 MHz 130 W 80 V N-Channel RF Power Transistor MOSFET - M-243
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Mosfet, Rf, N-Ch, 80V, M243-3; Drain Source Voltage Vds:80V; Continuous Drain Current Id:12A; Power Dissipation Pd:130W; Operating Frequency Min:-; Operating Frequency Max:945Mhz; Rf Transistor Case:-; No. Of Pins:3Pins; Msl:-

Product Comparison

The three parts on the right have similar specifications to LET9060C.

Image

Part Number

Manufacturer

Mount

Package / Case

Number of Pins

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Frequency

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Case Connection

Current - Test

Transistor Application

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Transistor Type

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Gain

Drain Current-Max (Abs) (ID)

Power - Output

FET Technology

Voltage - Test

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Surface Mount

Transistor Element Material

JESD-609 Code

Terminal Finish

Voltage - Rated

Additional Feature

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Temperature (Max)

Configuration

DS Breakdown Voltage-Min

Power Dissipation-Max (Abs)

View Compare
LET9060C

STMicroelectronics

Screw, Surface Mount

M243

3

Bulk

Obsolete

1 (Unlimited)

2

EAR99

200°C

-65°C

FET General Purpose Power

130W

DUAL

FLAT

12A

945MHz

LET9060

2

R-PDFM-F2

1

Single

ENHANCEMENT MODE

SOURCE

400mA

AMPLIFIER

80V

N-CHANNEL

LDMOS

12A

15V

18dB

7A

75W

METAL-OXIDE SEMICONDUCTOR

28V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
LET9070CB

STMicroelectronics

Screw

M243

243

Bulk

Obsolete

1 (Unlimited)

-

EAR99

150°C

-65°C

-

130W

-

-

12A

945MHz

LET9070

-

-

1

-

-

-

400mA

-

80V

-

LDMOS

12A

15V

16dB

-

80W

-

28V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LET9060C vs LET9070CB
LET9060STR

STMicroelectronics

-

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

3

Tape & Reel (TR)

Active

3 (168 Hours)

2

EAR99

-

-

FET General Purpose Power

-

DUAL

FLAT

12A

960MHz

LET9060

10

R-PDSO-F2

1

-

ENHANCEMENT MODE

SOURCE

300mA

AMPLIFIER

-

N-CHANNEL

LDMOS

-

-

17.2dB

7A

60W

METAL-OXIDE SEMICONDUCTOR

28V

-

ROHS3 Compliant

-

52 Weeks

YES

SILICON

e3

Matte Tin (Sn) - annealed

80V

HIGH RELIABILITY

250

not_compliant

30

Not Qualified

165°C

SINGLE

80V

170W

LET9060C vs LET9060STR
LET9045S

STMicroelectronics

Surface Mount

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

3

Tube

Active

3 (168 Hours)

2

EAR99

165°C

-65°C

FET General Purpose Power

79W

DUAL

FLAT

9A

960MHz

LET9045

10

R-PDSO-F2

1

-

ENHANCEMENT MODE

SOURCE

300mA

AMPLIFIER

-

N-CHANNEL

LDMOS

5A

-

17.5dB

9A

59W

METAL-OXIDE SEMICONDUCTOR

28V

No

ROHS3 Compliant

Lead Free

52 Weeks

-

-

e3

Matte Tin (Sn) - annealed

80V

HIGH RELIABILITY

250

-

30

-

-

SINGLE

80V

-

LET9060C vs LET9045S