Fairchild/ON Semiconductor KST56MTF
- Part Number:
- KST56MTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585235-KST56MTF
- Description:
- TRANS PNP 80V 0.5A SOT-23
- Datasheet:
- KST56MTF
Fairchild/ON Semiconductor KST56MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KST56MTF.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberKST56
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)-80V
- Emitter Base Voltage (VEBO)-4V
- hFE Min50
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
KST56MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
KST56MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST56MTF Applications
There are a lot of ON Semiconductor
KST56MTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
KST56MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST56MTF Applications
There are a lot of ON Semiconductor
KST56MTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KST56MTF More Descriptions
KST56 Series 80 V 500 mA 350 mW SMT PNP Epitaxial Silicon Transistor-SOT-23-3
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to KST56MTF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeLifecycle StatusSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KST56MTF6 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICONTape & Reel (TR)2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)150°COther Transistors-80V350mWDUALGULL WING260-500mA50MHz30KST56Not Qualified1Single350mWAMPLIFIER50MHzPNPPNP80V500mA50 @ 100mA 1V100nA250mV @ 10mA, 100mA80V50MHz-250mV80V-80V-4V50RoHS CompliantLead Free-------
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6 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICONTape & Reel (TR)2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)150°COther Transistors-60V350mWDUALGULL WINGNOT SPECIFIED-500mA50MHzNOT SPECIFIEDKST55Not Qualified1Single350mWAMPLIFIER50MHzPNPPNP60V500mA50 @ 100mA 1V100nA250mV @ 10mA, 100mA60V50MHz-250mV60V-60V-4V50RoHS CompliantLead FreeLAST SHIPMENTS (Last Updated: 2 weeks ago)-----
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--Surface MountTO-236-3, SC-59, SOT-23-3---Tape & Reel (TR)---Obsolete1 (Unlimited)---------------------PNP--250 @ 100μA 5V50nA ICBO300mV @ 1mA, 10mA-------ROHS3 Compliant--SOT-23-3350mW50V50mA40MHz
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--Surface MountTO-236-3, SC-59, SOT-23-3---Tape & Reel (TR)2002--Obsolete1 (Unlimited)---------------------NPN--400 @ 100μA 5V50nA ICBO500mV @ 1mA, 10mA----------SOT-23-3350mW25V50mA50MHz
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