Fairchild/ON Semiconductor KSP2222ATA
- Part Number:
- KSP2222ATA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462939-KSP2222ATA
- Description:
- TRANS NPN 40V 0.6A TO-92
- Datasheet:
- KSP2222ATA
Fairchild/ON Semiconductor KSP2222ATA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP2222ATA.
- Lifecycle StatusACTIVE (Last Updated: 14 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating600mA
- Frequency300MHz
- Base Part NumberKSP2222
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)285ns
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSP2222ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KSP2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ATA Applications
There are a lot of ON Semiconductor
KSP2222ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSP2222ATA More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Fan-Fold
3 Kinked Lead Plastic Package 0.6 Amp NPN General Purpose Amplifier TO-92
TRANSISTOR NPN 40V 600MA TO-92
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
40V 625mW 600mA 100@150mA10V 300MHz 1V@500mA50mA NPN 150¡Í@(Tj) TO-92_Forming1 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Fan-Fold
3 Kinked Lead Plastic Package 0.6 Amp NPN General Purpose Amplifier TO-92
TRANSISTOR NPN 40V 600MA TO-92
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
40V 625mW 600mA 100@150mA10V 300MHz 1V@500mA50mA NPN 150¡Í@(Tj) TO-92_Forming1 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
The three parts on the right have similar specifications to KSP2222ATA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KSP2222ATAACTIVE (Last Updated: 14 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V625mWBOTTOM600mA300MHzKSP22221Single625mW300MHzNPNNPN40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V40V75V6V100285ns4.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead Free------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk2002--Obsolete1 (Unlimited)---------------NPN - Darlington--10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA---------------TO-92-3625mW60V500mA-
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk---Obsolete1 (Unlimited)---------------NPN - Darlington--10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA---------------TO-92-3625mW40V500mA-
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---135°C TJBulk---Obsolete1 (Unlimited)---------------NPN--30 @ 8mA 10V50nA ICBO----------------TO-92-3350mW30V100mA620MHz
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