Fairchild/ON Semiconductor KSP2222ABU
- Part Number:
- KSP2222ABU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845093-KSP2222ABU
- Description:
- TRANS NPN 40V 0.6A TO-92
- Datasheet:
- KSP2222ABU
Fairchild/ON Semiconductor KSP2222ABU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP2222ABU.
- Lifecycle StatusACTIVE (Last Updated: 13 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight179mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating600mA
- Frequency300MHz
- Base Part NumberKSP2222
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)285ns
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSP2222ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ABU Applications
There are a lot of ON Semiconductor
KSP2222ABU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
KSP2222ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
KSP2222ABU Applications
There are a lot of ON Semiconductor
KSP2222ABU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSP2222ABU More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSP2222A Series 40 V 600 mA 625 mW NPN General Purpose Amplifier - TO-92-3
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Bag
IC KSP2222A NPN General Purpose Amplifier 40V (PN2222A) TO-92
TRANSISTOR NPN 40V 600MA TO-92
40V 625mW 600mA 100@150mA10V 300MHz 1V@500mA50mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Tr
KSP2222A Series 40 V 600 mA 625 mW NPN General Purpose Amplifier - TO-92-3
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Bag
IC KSP2222A NPN General Purpose Amplifier 40V (PN2222A) TO-92
TRANSISTOR NPN 40V 600MA TO-92
40V 625mW 600mA 100@150mA10V 300MHz 1V@500mA50mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Tr
The three parts on the right have similar specifications to KSP2222ABU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationHighest Frequency BandCollector-Base Capacitance-MaxTransistor ApplicationTurn On Time-Max (ton)View Compare
-
KSP2222ABUACTIVE (Last Updated: 13 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICON150°C TJBulk2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V625mWBOTTOM600mA300MHzKSP22221Single625mW300MHzNPNNPN40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA45V300MHz1V40V75V6V100285ns4.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead Free-----------------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---135°C TJBulk---Obsolete1 (Unlimited)---------------NPN--30 @ 8mA 10V50nA ICBO----------------TO-92-3350mW30V100mA620MHz-----------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON135°C TJTape & Box (TB)-e3yesObsolete1 (Unlimited)3-MATTE TIN---BOTTOM---1---NPNNPN--30 @ 8mA 10V50nA ICBO--620MHz-----------ROHS3 Compliant--350mW30V100mA620MHzNONOT APPLICABLEunknownNOT APPLICABLEO-PBCY-T3COMMERCIALSINGLEVERY HIGH FREQUENCY B0.36pF--
-
ACTIVE (Last Updated: 16 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-60V625mWBOTTOM-600mA200MHzKSP2907A1Single625mW200MHzPNPPNP60V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V-60V-5V100-4.7mm4.7mm3.93mm-NoROHS3 CompliantLead Free--------------AMPLIFIER45ns
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 December 2023
1N4007 Diode Characteristics and Application Guide
Ⅰ. Introduction of 1N4007Ⅱ. Naming rules of 1N4007 diodeⅢ. Technical parameters of 1N4007 diodeⅣ. Can we use 1N4004 instead of 1N4007?Ⅴ. 1N4007 diode principle of operationⅥ. Electrical characteristic... -
21 December 2023
Comprehensive Exploration of BC547 Transistor: Advantages, Uses, Specifications and Working Status
Ⅰ. BC547 descriptionⅡ. What are the advantages of BC547 transistor?Ⅲ. BC547 application circuitⅣ. Specifications of BC547Ⅴ. Working status of BC547 transistorⅥ. Absolute maximum ratings of BC547Ⅶ. What are... -
21 December 2023
Exploring the PC817 Optocoupler: Working Principle, Package, Manufacturer and More
Ⅰ. What is PC817 optocoupler?Ⅱ. How PC817 optocoupler works?Ⅲ. Where can we use PC817 optocoupler?Ⅳ. PC817 optocoupler packageⅤ. How to measure the quality of PC817?Ⅵ. Manufacturer of PC817... -
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.