Fairchild/ON Semiconductor KSD526Y
- Part Number:
- KSD526Y
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585283-KSD526Y
- Description:
- TRANS NPN 80V 4A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor KSD526Y technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSD526Y.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation30W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating4A
- Frequency8MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberKSD526
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation30W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product8MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 5V
- Current - Collector Cutoff (Max)30μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 300mA, 3A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency8MHz
- Collector Emitter Saturation Voltage450mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSD526Y Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 8MHz.A maximum collector current of 4A volts can be achieved.
KSD526Y Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526Y Applications
There are a lot of ON Semiconductor
KSD526Y applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 8MHz.A maximum collector current of 4A volts can be achieved.
KSD526Y Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526Y Applications
There are a lot of ON Semiconductor
KSD526Y applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSD526Y More Descriptions
Transistor,bjt,npn,80V V(Br)Ceo,4A I(C),to-220Ab Rohs Compliant: Yes |Onsemi KSD526Y
Trans GP BJT NPN 80V 4A 30000mW 3-Pin(3 Tab) TO-220 Bag
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
30Ã×A 80V 30W 4A 50@3A5V 8MHz 450mV@3A300mA NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT NPN 80V 4A 30000mW 3-Pin(3 Tab) TO-220 Bag
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
30Ã×A 80V 30W 4A 50@3A5V 8MHz 450mV@3A300mA NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to KSD526Y.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSurface MountHTS CodeTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageView Compare
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KSD526YACTIVE (Last Updated: 4 days ago)2 WeeksThrough HoleThrough HoleTO-220-331.8gSILICON150°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors80V30WNOT SPECIFIED4A8MHzNOT SPECIFIEDKSD526Not Qualified1Single30WAMPLIFIER8MHzNPNNPN80V4A120 @ 500mA 5V30μA ICBOTO-220AB1.5V @ 300mA, 3A80V8MHz450mV80V5V40ROHS3 CompliantLead Free----------- -
---Through HoleTO-220-3--SILICON150°C TJTube-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN---NOT APPLICABLE--NOT APPLICABLEKSD560Not Qualified1--AMPLIFIER-NPNNPN - Darlington--3000 @ 3A 2V1μA ICBOTO-220AB1.5V @ 3mA, 3A------RoHS Compliant-NO8541.29.00.95SINGLEcompliantR-PSFM-T3DARLINGTON WITH BUILT-IN DIODE1.5W100V5A-
-
---Through HoleTO-220-3---150°C TJTube---Obsolete1 (Unlimited)------------------NPN--100 @ 3A 1V10μA ICBO-500mV @ 500mA, 5A--------------1.5W80V7ATO-220-3
-
---Through HoleTO-220-3---150°C TJBulk---Obsolete1 (Unlimited)------------------NPN - Darlington---1mA-1.5V @ 20mA, 3A--------------40W275V4ATO-220-3
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