Fairchild/ON Semiconductor KSC1815YTA
- Part Number:
- KSC1815YTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462949-KSC1815YTA
- Description:
- TRANS NPN 50V 0.15A TO-92
- Datasheet:
- KSC1815YTA
Fairchild/ON Semiconductor KSC1815YTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSC1815YTA.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation400mW
- Terminal PositionBOTTOM
- Current Rating150mA
- Frequency80MHz
- Base Part NumberKSC1815
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation400mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product80MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency80MHz
- Collector Emitter Saturation Voltage100mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min70
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSC1815YTA Overview
In this device, the DC current gain is 70 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).80MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
KSC1815YTA Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 80MHz
KSC1815YTA Applications
There are a lot of ON Semiconductor
KSC1815YTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 70 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).80MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
KSC1815YTA Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 80MHz
KSC1815YTA Applications
There are a lot of ON Semiconductor
KSC1815YTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSC1815YTA More Descriptions
Bipolar Transistor (BJT) NPN 50V 150mA 80MHz 400mW TO-92-3
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSC1815 Series 50 V 150 mA Through Hole NPN Epitaxial Silicon Transistor-TO-92-3
Bipolar Transistors - BJT NPN Epitaxial Sil
General Purpose Transistor, TO-92, NPN, 50V
TRANSISTOR, BIPOL, NPN, 50V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 400mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE;
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSC1815 Series 50 V 150 mA Through Hole NPN Epitaxial Silicon Transistor-TO-92-3
Bipolar Transistors - BJT NPN Epitaxial Sil
General Purpose Transistor, TO-92, NPN, 50V
TRANSISTOR, BIPOL, NPN, 50V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 400mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE;
The three parts on the right have similar specifications to KSC1815YTA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KSC1815YTAACTIVE (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors50V400mWBOTTOM150mA80MHzKSC18151Single400mWAMPLIFIER80MHzNPNNPN50V150mA70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA50V80MHz100mV50V60V5V705.33mm5.2mm4.19mmNo SVHCNoROHS3 CompliantLead Free------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk---Obsolete1 (Unlimited)---------KSC1815------NPN--200 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA--------------TO-92-3400mW50V150mA80MHz
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---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------KSC1008------NPN--120 @ 50mA 2V100nA ICBO400mV @ 50mA, 500mA--------------TO-92-3800mW60V700mA50MHz
-
--Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3-SILICON150°C TJTape & Box (TB)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-60V800mWBOTTOM700mA50MHzKSC10081Single800mWSWITCHING50MHzNPNNPN60V700mA70 @ 50mA 2V100nA ICBO400mV @ 50mA, 500mA60V50MHz200mV-80V8V40----NoRoHS CompliantLead Free-----
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