Fairchild/ON Semiconductor KSC1008CYTA
- Part Number:
- KSC1008CYTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585246-KSC1008CYTA
- Description:
- TRANS NPN 60V 0.7A TO-92
- Datasheet:
- KSC1008CYTA
Fairchild/ON Semiconductor KSC1008CYTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSC1008CYTA.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating700mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberKSC1008
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation800mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)8V
- hFE Min40
- Height4.7mm
- Length4.7mm
- Width3.93mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSC1008CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSC1008CYTA More Descriptions
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSC Series NPN 800 mW 60 V 700 mA Through Hole Epitaxial Transistor - TO-92
60V 800mW 700mA NPN TO-92-3L Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 60V 0.7A 3-Pin TO-92 Ammo - Ammo Pack
Bipolar Transistors - BJT NPN Epitaxial Transistor
Trans, Npn, 60V, 0.7A, 150Deg C, 0.8W Rohs Compliant: Yes |Onsemi KSC1008CYTA
KSC Series NPN 800 mW 60 V 700 mA Through Hole Epitaxial Transistor - TO-92
60V 800mW 700mA NPN TO-92-3L Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 60V 0.7A 3-Pin TO-92 Ammo - Ammo Pack
Bipolar Transistors - BJT NPN Epitaxial Transistor
Trans, Npn, 60V, 0.7A, 150Deg C, 0.8W Rohs Compliant: Yes |Onsemi KSC1008CYTA
The three parts on the right have similar specifications to KSC1008CYTA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTerminal FormView Compare
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KSC1008CYTAACTIVE (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V800mWBOTTOMNOT SPECIFIED700mA50MHzNOT SPECIFIEDKSC1008Not Qualified1Single800mWSWITCHING50MHzNPNNPN60V700mA120 @ 50mA 2V100nA ICBO400mV @ 50mA, 500mA60V50MHz200mV60V80V8V404.7mm4.7mm3.93mmROHS3 CompliantLead Free-------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------KSC1008-------NPN--120 @ 50mA 2V100nA ICBO400mV @ 50mA, 500mA------------TO-92-3800mW60V700mA50MHz-
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---Through HoleTO-226-3, TO-92-3 (TO-226AA)----Bulk---Obsolete1 (Unlimited)-----------KSC1675-------NPN--70 @ 1mA 6V100nA ICBO300mV @ 1mA, 10mA------------TO-92-3250mW30V50mA300MHz-
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LAST SHIPMENTS (Last Updated: 2 days ago)13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON150°C TJTape & Reel (TR)2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors50V200mWDUALNOT SPECIFIED100mA250MHzNOT SPECIFIEDKSC1623Not Qualified1Single200mWAMPLIFIER250MHzNPNNPN50V100mA135 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA50V250MHz150mV50V60V5V90---ROHS3 CompliantLead Free-----GULL WING
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