Fairchild/ON Semiconductor KSB1116SYBU

Name: KSB1116SYBU
Brand: Fairchild/ON Semiconductor
SKU: 3585562-KSB1116SYBU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: KSB1116SYBU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3585562-KSB1116SYBU

Description:: TRANS PNP 50V 1A TO-92

ECAD Model:

Datasheet:: KSB1116S

Specifications

Fairchild/ON Semiconductor KSB1116SYBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSB1116SYBU.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
135 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
1A
Transition Frequency
120MHz
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant

Description

KSB1116SYBU Overview
In this device, the DC current gain is 135 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 1A.120MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.

KSB1116SYBU Features
the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz

KSB1116SYBU Applications
There are a lot of Rochester Electronics, LLC
KSB1116SYBU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

KSB1116SYBU More Descriptions

Bulk Through Hole PNP KSB1116 Bipolar (BJT) Transistor 135 @ 100mA 2V 1A 750mW 120MHz
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Trans GP BJT PNP 50V 1A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Product Comparison

The three parts on the right have similar specifications to KSB1116SYBU.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Element Configuration

Power Dissipation

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Radiation Hardening

Lead Free

View Compare
KSB1116SYBU

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

SILICON

150°C TJ

Bulk

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

BOTTOM

NOT APPLICABLE

unknown

NOT APPLICABLE

O-PBCY-T3

COMMERCIAL

1

SINGLE

750mW

SWITCHING

PNP

PNP

135 @ 100mA 2V

100nA ICBO

300mV @ 50mA, 1A

50V

1A

120MHz

120MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
KSB1151YSTU

Fairchild/ON Semiconductor

Through Hole

TO-225AA, TO-126-3

-

SILICON

150°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

-

-

-

-

-

-

1

-

-

-

PNP

PNP

160 @ 2A 1V

10μA ICBO

300mV @ 200mA, 2A

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Through Hole

3

761mg

2003

EAR99

Other Transistors

-60V

1.3W

-5A

KSB1151

Single

1.3W

60V

5A

60V

-140mV

-60V

-7V

100

No

Lead Free

KSB1116SYBU vs KSB1151YSTU
KSB1151YSTSSTU

Fairchild/ON Semiconductor

Through Hole

TO-225AA, TO-126-3

-

-

150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

1

-

-

-

-

PNP

160 @ 2A 1V

10μA ICBO

300mV @ 200mA, 2A

-

-

-

-

RoHS Compliant

-

-

Through Hole

3

758mg

-

-

-

-60V

1.3W

-5A

KSB1151

Single

1.3W

60V

5A

60V

-140mV

-60V

-7V

100

No

Lead Free

KSB1116SYBU vs KSB1151YSTSSTU
KSB1116AYBU

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

150°C TJ

Bulk

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

750mW

-

-

PNP

135 @ 100mA 2V

100nA ICBO

300mV @ 50mA, 1A

60V

1A

-

120MHz

-

-

-

-

-

-

-

-

-

-

-

-

KSB1116

-

-

-

-

-

-

-

-

-

-

-

KSB1116SYBU vs KSB1116AYBU