Fairchild/ON Semiconductor KSA928AYTA
- Part Number:
- KSA928AYTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463047-KSA928AYTA
- Description:
- TRANS PNP 30V 2A TO-92-3
- Datasheet:
- KSA928AYTA
Fairchild/ON Semiconductor KSA928AYTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA928AYTA.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
- Number of Pins3
- Weight371.1027mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating-2A
- Frequency120MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberKSA928
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product120MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic2V @ 30mA, 1.5A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency120MHz
- Collector Emitter Saturation Voltage-2V
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)-30V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Height8mm
- Length4.9mm
- Width3.9mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA928AYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 30mA, 1.5A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSA928AYTA Features
the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 120MHz
KSA928AYTA Applications
There are a lot of ON Semiconductor
KSA928AYTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 30mA, 1.5A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSA928AYTA Features
the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 120MHz
KSA928AYTA Applications
There are a lot of ON Semiconductor
KSA928AYTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA928AYTA More Descriptions
Trans GP BJT PNP 30V 2A 1000mW 3-Pin TO-92L Fan-Fold
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
TRANSISTOR, BIPOL, PNP, -30V, TO-92L-3
TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -30V, TO-92L-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 1W; DC Collector Current: -2A; DC Current Gain hFE: 160hFE; Tra
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
TRANSISTOR, BIPOL, PNP, -30V, TO-92L-3
TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -30V, TO-92L-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 1W; DC Collector Current: -2A; DC Current Gain hFE: 160hFE; Tra
The three parts on the right have similar specifications to KSA928AYTA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeRadiation HardeningHTS CodeConfigurationPower - MaxFrequency - TransitionView Compare
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KSA928AYTAACTIVE (Last Updated: 1 day ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)2017e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-30V1WBOTTOMNOT SPECIFIED-2A120MHzNOT SPECIFIEDKSA928Not Qualified1Single1WAMPLIFIER120MHzPNPPNP30V2A160 @ 500mA 2V100nA ICBO2V @ 30mA, 1.5A30V120MHz-2V30V-30V-5V1008mm4.9mm3.9mmNo SVHCROHS3 CompliantLead Free------
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--Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3--150°C TJBulk---Obsolete1 (Unlimited)-----120V500mW---50mA100MHz-KSA992-1Single500mW-100MHz-PNP120V50mA200 @ 1mA 6V1μA300mV @ 1mA, 10mA120V--90mV-120V-5V200----RoHS CompliantLead FreeNo----
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ACTIVE (Last Updated: 1 day ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mg-150°C TJTape & Box (TB)-e3yesActive1 (Unlimited)-EAR99Tin (Sn)Other Transistors-500mW-----KSA992------PNPPNP300mV50mA200 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50MHz-120V-120V-5V200----ROHS3 CompliantLead FreeNo8541.29.00.95Single500mW100MHz
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ACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mg-150°C TJTape & Box (TB)2017e3yesActive1 (Unlimited)-EAR99Tin (Sn)Other Transistors-500mW-----KSA992------PNPPNP300mV50mA200 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50MHz-120V-120V-5V200----ROHS3 CompliantLead FreeNo8541.29.00.95Single500mW100MHz
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