Fairchild/ON Semiconductor KSA916OBU
- Part Number:
- KSA916OBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585493-KSA916OBU
- Description:
- TRANS PNP 120V 0.8A TO-92L
- ECAD Model:
-
- Datasheet:
- KSA916OBU
Fairchild/ON Semiconductor KSA916OBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA916OBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body
- Supplier Device PackageTO-92-3
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max900mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)120V
- Current - Collector (Ic) (Max)800mA
- Frequency - Transition120MHz
- RoHS StatusROHS3 Compliant
KSA916OBU Overview
DC current gain in this device equals 80 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSA916OBU Features
the DC current gain for this device is 80 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3
KSA916OBU Applications
There are a lot of Rochester Electronics, LLC
KSA916OBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 80 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSA916OBU Features
the DC current gain for this device is 80 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3
KSA916OBU Applications
There are a lot of Rochester Electronics, LLC
KSA916OBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA916OBU More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 80 @ 100mA 5V 100nA ICBO 900mW 120MHz
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Compliant Through Hole 60 PNP 120 MHz Lead Free Bulk TO-226-3
IC EEPROM 16K SPI 5MHZ 8-DIP-T
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Compliant Through Hole 60 PNP 120 MHz Lead Free Bulk TO-226-3
IC EEPROM 16K SPI 5MHZ 8-DIP-T
The three parts on the right have similar specifications to KSA916OBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeHTS CodeSubcategoryMax Power DissipationBase Part NumberCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningLead FreeMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingFrequencyPolarityElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Saturation VoltageView Compare
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KSA916OBUThrough HoleTO-226-3, TO-92-3 Long BodyTO-92-3150°C TJBulkObsolete1 (Unlimited)900mWPNP80 @ 100mA 5V100nA ICBO1V @ 50mA, 500mA120V800mA120MHzROHS3 Compliant------------------------------------------------ -
Through HoleTO-226-3, TO-92-3 Long Body-150°C TJBulkObsolete1 (Unlimited)1WPNP160 @ 500mA 2V100nA ICBO2V @ 30mA, 1.5A30V2A120MHzROHS3 CompliantNOSILICONe3yes3MATTE TINBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLEAMPLIFIERPNP120MHz------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-150°C TJTape & Box (TB)Active1 (Unlimited)500mWPNP200 @ 1mA 6V1μA300mV @ 1mA, 10mA--100MHzROHS3 Compliant--e3yes-Tin (Sn)-------Single-PNP50MHzACTIVE (Last Updated: 1 day ago)2 WeeksThrough Hole3240mg2017EAR998541.29.00.95Other Transistors500mWKSA992300mV50mA120V120V-120V-5V200NoLead Free----------
-
Through HoleTO-220-3TO-220-3150°C TJTubeObsolete1 (Unlimited)1.5WPNP40 @ 500mA 10V10μA ICBO1.5V @ 50mA, 500mA150V1.5A4MHzRoHS Compliant------------1------Through Hole31.8g----1.5WKSA940150V1.5A150V--150V-5V40NoLead Free150°C-55°C-150V-1.5A4MHzPNPSingle1.5W4MHz-1.5V
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