Fairchild/ON Semiconductor KSA643YTA
- Part Number:
- KSA643YTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585275-KSA643YTA
- Description:
- TRANS PNP 20V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- KSA643YTA
Fairchild/ON Semiconductor KSA643YTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA643YTA.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberKSA643
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 1V
- Current - Collector Cutoff (Max)200nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage20V
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min40
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA643YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 1V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KSA643YTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
KSA643YTA Applications
There are a lot of ON Semiconductor
KSA643YTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 1V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KSA643YTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
KSA643YTA Applications
There are a lot of ON Semiconductor
KSA643YTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA643YTA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Epitaxial Transistor
Trans GP BJT PNP 20V 0.5A 3-Pin TO-92 Ammo
Bipolar Transistors - BJT PNP Epitaxial Transistor
Trans GP BJT PNP 20V 0.5A 3-Pin TO-92 Ammo
The three parts on the right have similar specifications to KSA643YTA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)JEDEC-95 CodeRadiation HardeningSurface MountReach Compliance CodeJESD-30 CodeConfigurationView Compare
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KSA643YTALAST SHIPMENTS (Last Updated: 1 week ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2007e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-20V500mWBOTTOMNOT SPECIFIED-500mANOT SPECIFIEDKSA643Not Qualified1Single500mWAMPLIFIERPNPPNP20V500mA120 @ 100mA 1V200nA ICBO400mV @ 50mA, 500mA20V-300mV20V-40V-5V40ROHS3 CompliantLead Free---------- -
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk---Obsolete1 (Unlimited)----------KSA643------PNP--120 @ 100mA 1V200nA ICBO400mV @ 50mA, 500mA--------500mW20V500mA------
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LAST SHIPMENTS (Last Updated: 1 week ago)6 WeeksThrough HoleThrough HoleTO-220-331.8gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-55V25W---3A-KSA614-1Single25WAMPLIFIERPNPPNP55V3A120 @ 500mA 5V50μA ICBO500mV @ 100mA, 1A55V-150mV--80V-5V40RoHS CompliantLead Free---TO-220ABNo----
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---Through HoleTO-226-3, TO-92-3 (TO-226AA)--SILICON150°C TJBulk-e3yesObsolete1 (Unlimited)3-MATTE TIN---BOTTOMNOT APPLICABLE-NOT APPLICABLE-COMMERCIAL1--AMPLIFIERPNPPNP--120 @ 50mA 1V100nA ICBO600mV @ 30mA, 300mA------ROHS3 Compliant-400mW25V300mA--NOunknownO-PBCY-T3SINGLE
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