Aeroflex Metelics, Division of MACOM JANTXV2N5153L

Name: JANTXV2N5153L
Brand: Aeroflex Metelics, Division of MACOM
SKU: 2845401-JANTXV2N5153L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N5153L

Manufacturer:: Aeroflex Metelics, Division of MACOM

Ventron No:: 2845401-JANTXV2N5153L

Description:: DIODE

ECAD Model:

Datasheet:: JANTXV2N5153L

Specifications

Aeroflex Metelics, Division of MACOM JANTXV2N5153L technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTXV2N5153L.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/545
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2.5A 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Transition Frequency
70MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5.5V
Turn On Time-Max (ton)
500ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N5153L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.If the emitter base voltage is kept at 5.5V, a high level of efficiency can be achieved.A transition frequency of 70MHz is present in the part.Collector current can be as low as 2A volts at its maximum.

JANTXV2N5153L Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz

JANTXV2N5153L Applications
There are a lot of Microsemi Corporation
JANTXV2N5153L applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTXV2N5153L More Descriptions

Trans GP BJT PNP 80V 2A 3-Pin TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N5153L
Power BJT _ TO-5

Certification