Microsemi Corporation JANTXV2N3635
- Part Number:
- JANTXV2N3635
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466293-JANTXV2N3635
- Description:
- TRANS PNP 140V 1A
- ECAD Model:
-
- Datasheet:
- JANTXV2N3635
Microsemi Corporation JANTXV2N3635 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N3635.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-39
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/357
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)5V
- Turn Off Time-Max (toff)650ns
- Turn On Time-Max (ton)200ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTXV2N3635 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
JANTXV2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N3635 Applications
There are a lot of Microsemi Corporation
JANTXV2N3635 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
JANTXV2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N3635 Applications
There are a lot of Microsemi Corporation
JANTXV2N3635 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N3635 More Descriptions
Trans GP BJT PNP 140V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
Non-Compliant Through Hole PNP Contains Lead Bulk TO-39 3
Small-Signal BJT _ TO-39
Non-Compliant Through Hole PNP Contains Lead Bulk TO-39 3
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