Microsemi Corporation JANTXV2N3055

Name: JANTXV2N3055
Brand: Microsemi Corporation
SKU: 2470655-JANTXV2N3055
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N3055

Manufacturer:: Microsemi Corporation

Ventron No:: 2470655-JANTXV2N3055

Description:: TRANS NPN 70V 15A TO-3

ECAD Model:

Datasheet:: JANTXV2N3055

Specifications

Microsemi Corporation JANTXV2N3055 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N3055.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/407
Published
2002
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Other Transistors
Max Power Dissipation
6W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
6W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
70V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 3.3A, 10A
Transition Frequency
2.5MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N3055 Overview
In this device, the DC current gain is 20 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 3.3A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.2.5MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.

JANTXV2N3055 Features
the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 2V @ 3.3A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz

JANTXV2N3055 Applications
There are a lot of Microsemi Corporation
JANTXV2N3055 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTXV2N3055 More Descriptions

Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Trans GP BJT NPN 70V 15A 3-Pin(2 Tab) TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTXV2N3055

Certification