Microsemi Corporation JANTX2N6650
- Part Number:
- JANTX2N6650
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2845759-JANTX2N6650
- Description:
- TRANS PNP DARL 80V 10A TO-3
- ECAD Model:
-
- Datasheet:
- JANTX2N6650
Microsemi Corporation JANTX2N6650 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6650.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time36 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/527
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max5W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)80V
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3V @ 100μA, 10A
- Current - Collector (Ic) (Max)10A
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N6650 Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100μA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.
JANTX2N6650 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100μA, 10A
the emitter base voltage is kept at 5V
JANTX2N6650 Applications
There are a lot of Microsemi Corporation
JANTX2N6650 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100μA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.
JANTX2N6650 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100μA, 10A
the emitter base voltage is kept at 5V
JANTX2N6650 Applications
There are a lot of Microsemi Corporation
JANTX2N6650 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N6650 More Descriptions
Trans Darlington PNP 80V 10A 5000mW 3-Pin(2 Tab) TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N6650
PNP DARLINGTON TRANSISTOR
OEMs, CMs ONLY (NO BROKERS)
Power BJT _ TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N6650
PNP DARLINGTON TRANSISTOR
OEMs, CMs ONLY (NO BROKERS)
Power BJT _ TO-3
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