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JANTX2N6286

Microsemi Corporation JANTX2N6286

Part Number:
JANTX2N6286
Manufacturer:
Microsemi Corporation
Ventron No:
2466455-JANTX2N6286
Description:
TRANS PNP DARL 80V 20A TO-3
ECAD Model:
Datasheet:
JANTX2N6286

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Specifications
Microsemi Corporation JANTX2N6286 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6286.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~175°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/505
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Power - Max
    175W
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    80V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1250 @ 10A 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 200mA, 20A
  • Current - Collector (Ic) (Max)
    20A
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    3V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    7V
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N6286 Overview
This device has a DC current gain of 1250 @ 10A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 4MHz.

JANTX2N6286 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz


JANTX2N6286 Applications
There are a lot of Microsemi Corporation
JANTX2N6286 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N6286 More Descriptions
Trans Darlington PNP 80V 20A 175000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 20A I(C), 80V V(Br)Ceo, 1-Element, Pnp, Silicon, To-204Aa, Metal, 2 Pin Rohs Compliant: Yes |Microchip JANTX2N6286
Power BJT _ TO-3
JANTX2N6286 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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