Microsemi Corporation JANTX2N5039
- Part Number:
- JANTX2N5039
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470548-JANTX2N5039
- Description:
- TRANS NPN 75V 20A TO-3
- Datasheet:
- JANTX2N5039
Microsemi Corporation JANTX2N5039 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5039.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/439
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation140W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation140W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)75V
- Max Collector Current20A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1V @ 1A, 10A
- Transition Frequency60MHz
- Collector Base Voltage (VCBO)125V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N5039 Overview
In this device, the DC current gain is 30 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.60MHz is present in the transition frequency.Maximum collector currents can be below 20A volts.
JANTX2N5039 Features
the DC current gain for this device is 30 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
JANTX2N5039 Applications
There are a lot of Microsemi Corporation
JANTX2N5039 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.60MHz is present in the transition frequency.Maximum collector currents can be below 20A volts.
JANTX2N5039 Features
the DC current gain for this device is 30 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
JANTX2N5039 Applications
There are a lot of Microsemi Corporation
JANTX2N5039 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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