JANTX2N4029

Microsemi Corporation JANTX2N4029

Part Number:
JANTX2N4029
Manufacturer:
Microsemi Corporation
Ventron No:
2846336-JANTX2N4029
Description:
TRANS PNP 80V 1A TO18
ECAD Model:
Datasheet:
JANTX2N4029

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Specifications
Microsemi Corporation JANTX2N4029 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N4029.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 4 weeks ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/512
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    500mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    500mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn On Time-Max (ton)
    40ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N4029 Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.

JANTX2N4029 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V


JANTX2N4029 Applications
There are a lot of Microsemi Corporation
JANTX2N4029 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N4029 More Descriptions
JANTX Series 80 V 1 A Through Hole PNP Silicon Switching Transistor - TO-18
Trans GP BJT PNP 80V 1A 500mW 3-Pin TO-18 Bag
Non-Compliant Through Hole PNP Contains Lead Bulk TO-18 3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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