Microsemi Corporation JANTX2N4029
- Part Number:
- JANTX2N4029
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2846336-JANTX2N4029
- Description:
- TRANS PNP 80V 1A TO18
- Datasheet:
- JANTX2N4029
Microsemi Corporation JANTX2N4029 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N4029.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/512
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 5V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
- Collector Emitter Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Turn On Time-Max (ton)40ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N4029 Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.
JANTX2N4029 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
JANTX2N4029 Applications
There are a lot of Microsemi Corporation
JANTX2N4029 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.
JANTX2N4029 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
JANTX2N4029 Applications
There are a lot of Microsemi Corporation
JANTX2N4029 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N4029 More Descriptions
JANTX Series 80 V 1 A Through Hole PNP Silicon Switching Transistor - TO-18
Trans GP BJT PNP 80V 1A 500mW 3-Pin TO-18 Bag
Non-Compliant Through Hole PNP Contains Lead Bulk TO-18 3
Trans GP BJT PNP 80V 1A 500mW 3-Pin TO-18 Bag
Non-Compliant Through Hole PNP Contains Lead Bulk TO-18 3
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