JANTX2N3867

Microsemi Corporation JANTX2N3867

Part Number:
JANTX2N3867
Manufacturer:
Microsemi Corporation
Ventron No:
2466386-JANTX2N3867
Description:
TRANS PNP 40V 3A TO5
ECAD Model:
Datasheet:
JANTX2N3867

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation JANTX2N3867 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3867.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/350
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.95
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    1W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 1.5A 2V
  • Current - Collector Cutoff (Max)
    100μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 250mA, 2.5A
  • Collector Base Voltage (VCBO)
    40V
  • Turn Off Time-Max (toff)
    600ns
  • Turn On Time-Max (ton)
    100ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N3867 Overview
In this device, the DC current gain is 40 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 2.5A.Maximum collector currents can be below 3A volts.

JANTX2N3867 Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A


JANTX2N3867 Applications
There are a lot of Microsemi Corporation
JANTX2N3867 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3867 More Descriptions
JANTX Series 40 V 3 A 1 W Through Hole PNP Silicon Low Power Transistor - TO-5
Non-Compliant Through Hole Contains Lead Bulk 3 Production (Last Updated: 1 month ago) No
Trans GP BJT PNP 40V 0.03A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N3867
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.