Microsemi Corporation JANTX2N3700
- Part Number:
- JANTX2N3700
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464122-JANTX2N3700
- Description:
- TRANS NPN 80V 1A
- ECAD Model:
-
- Datasheet:
- JANTX2N3700
Microsemi Corporation JANTX2N3700 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3700.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/391
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N3700 Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.
JANTX2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JANTX2N3700 Applications
There are a lot of Microsemi Corporation
JANTX2N3700 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.
JANTX2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JANTX2N3700 Applications
There are a lot of Microsemi Corporation
JANTX2N3700 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3700 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
JANTX Series 80 V 1 mA Through Hole NPN Silicon Transistor - TO-18
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip JANTX2N3700
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18 Bag
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
JANTX Series 80 V 1 mA Through Hole NPN Silicon Transistor - TO-18
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip JANTX2N3700
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18 Bag
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
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